Electronic device and semiconductor device and method for manufacturing the same

ABSTRACT

It is conceivable that the problem that a signal is delayed by resistor of a wiring in producing a display which displays large area becomes remarkable. The present invention provides a manufacturing process using a droplet discharge method suitable for a large-sized substrate. 
     In the present invention, after forming a base layer  11  (or base pretreatment) which enhances adhesiveness over a substrate in advance and forming an insulating film, a mask having a desired pattern shape is formed, and a desired depression is formed by using the mask. A metal material is filled in the depression having a mask  13  and a sidewall made from an insulating film by a droplet discharge method to form an embedded wiring (a gate electrode, a capacitor wiring, lead wiring or the like. Afterwards, it is flattened by a planarization processing, for example, a press or a CMP processing.

TECHNICAL FIELD

The present invention relates to a semiconductor device having a circuitcomprising a thin film transistor (hereinafter referred to as TFT) and amethod for manufacturing the same. For example, the invention relates toan electronic device on which an electro-optical device typified by aliquid-crystal display panel is mounted as a component or an electronicdevice on which a light-emitting display device having an organiclight-emitting element is mounted as a component.

A semiconductor device according to this specification indicates devicein general which functions by using semiconductor properties. Anelectro-optical device, a semiconductor circuit and an electronic deviceare all included in a semiconductor device.

BACKGROUND ART

In recent years, a technique of configuring a thin film transistor (TFT)by using a semiconductor thin film (a thickness of about severalnanometers to several hundred nanometers) which is formed over asubstrate having an insulating surface attracts attention. A thin filmtransistor is widely applied to an electronic device such as an IC andan electro-optical device, and there is an urgent need for thedevelopment particularly as a switching element of an image displaydevice.

Conventionally, a liquid crystal display device is known as an imagedisplay device. An active matrix liquid crystal display device is usedmore often than a passive matrix liquid crystal display device since ahigher-definition image can be obtained compared to the passive matrixliquid crystal display. In an active matrix liquid crystal displaydevice, a display pattern is formed on screen by driving a pixelelectrode arranged in matrix. More specifically, by applying a voltagebetween a selected pixel electrode and a counter electrode correspondingto the pixel electrode, a crystalline layer which is disposed betweenthe pixel electrode and the counter electrode is modulated optically,and the optical modulation is recognized as a display pattern by anobserver.

Application of thus active matrix electro-optical device has beenwidened, and the demand on high definition, high aperture ratio and highreliability has been increased along with the demand on large area ofscreen size.

Till now, production engineering has been adopted in which a liquidcrystal display panel is mass produced efficiently by cutting out aplurality of liquid crystal display panels from one mother glasssubstrate. Size of a mother glass substrate is enlarged from 300×400 mmof the first generation in the early 1990s to 680×880 mm or 730×920 mmof the fourth generation in 2000, and a plurality of the display panelcan be obtained from one mother glass substrate.

In addition, the demand on improved productivity and lower cost has beenincreased along with the demand on large area of screen size.

In addition, in recent years, researches on a light emitting devicecomprising an EL element as a self-luminous light emitting element hasbeen activated. The light emitting device is also referred to as anorganic EL display or an organic light emitting diode. The lightemitting devices have characteristics such as high response speed whichis suitable for displaying moving images, low voltage drive, and lowpower consumption drive. Therefore, the light emitting devices has beenattracting attention as a next-generation displays includingnew-generation cellular phones, personal digital assistants (PDA) andthe like.

An EL element including a layer containing an organic compound as alight-emitting layer has the structure in which the layer containing anorganic compound (hereinafter referred to as EL layer) is interposedbetween an anode and a cathode. Upon applying electric field to theanode and cathode, luminescence (Electro Luminescence) is emitted fromthe EL layer. In addition, luminescence from the EL element includesluminescence (fluorescence) in returning from a singlet excited state toa ground state and luminescence (phosphorescence) in returning from thetriplet excited state to the ground state.

Application of thus active matrix display device has been widened, andthe demand on high definition, high aperture ratio and high reliabilityhas been increased along with the demand on large area of screen size.

Referring to Japanese Patent Laid-Open No. 2000-298446, a large-sizeddisplay is realized by disposing a plurality of panels like tiles toform one display screen. However, the cost is high since a plurality ofpanels is used, and a driving method becomes special.

In addition, the demand on improve3d productivity and lower cost hasbeen increased along with the demand on large area of screen size.

Additionally, the technique is described in Japanese Patent Laid-OpenNo. 2000-188251, in which film formation is conducted over asemiconductor wafer by using an apparatus capable of continuallydischarging liquid resist with a linear shape of small diameter from anozzle in order to increase yield of liquid which is used as filmformation.

DISCLOSURE OF INVENTION

It is conceivable that the problem that a signal is delayed by resistorof a wiring in producing a display which displays large area becomesremarkable. In a large-area display, a gate line propagating wave formis likely to deteriorate since wiring resistor and a wiring capacitanceare increased along with increase of total length of the wiring. Wringresistor can be decreased by increasing an area of cross section of ametal film serving as the wiring. However, when an area of cross sectionis increased by increasing a film thickness, a step is occurred betweena surface of the substrate and a surface of a wiring; thereby, defect oforientation of liquid crystal is caused in a liquid crystal displaydevice, and short of an anode and a cathode is caused in a lightemitting device. Additionally, when a wiring width is broaden toincrease an area of cross section, it is inevitable that an apertureratio is decreased. Further, wiring capacitance is increased and largeramount of current is necessary for raising a voltage of the wiring;thereby, power consumption is increased.

Thus, the present invention provides a device in which a large screendisplay using an embedded wiring formed by a droplet discharge method,having a structure intended to solve a signal delay problem, and amethod for manufacturing the same.

The invention also provides a method for realizing a display devicehaving a wiring formed by a droplet discharge method as a desiredelectrode width and a bottom gate type TFT having a channel length of 10μm or less as a switching element.

In the present invention, after forming a base layer (or basepretreatment) which enhances adhesiveness over a substrate in advanceand forming an insulating film, a mask having a desired pattern shape isformed, and a desired depression is formed by using the mask.

When the depression is formed by etching, it is preferable that a baselayer and further the substrate is not etched. Desirably, the base layerfunctions as an etching stopper. By leaving the base layer, adhesivenessbetween the substrate and a wiring are improved. In addition, when agroove is formed by etching to the substrate, intensity of the substrateis decreased. Accordingly, there is a risk that a crack due to anexternal pressure by a press step, a CMP processing or a step ofattaching a counter substrate, or shrinkage of a substrate in a thermalstep, or breaking of the substrate is occurred.

Then, a metal material is filled in the depression having a mask and asidewall made from an insulating film by a droplet discharge method toform an embedded wiring (a gate electrode, a capacitor wiring, leadwiring or the like). Note that the mask is formed by using a dropletdischarge method or a printing method (relief printing, flat plate,copperplate printing, screening or the like). Therefore, according tothe invention, an embedded wiring with a small width can be formed evenby a droplet discharge method as long as the mask for forming thedepression is formed with a minute pattern.

In this specification, a droplet discharge method indicates a method forforming a material pattern on a surface to be processed by dischargingmaterial solution onto a desired region from a nozzle. In thisspecification, for example, an ink-jet printing method, a dispensemethod, a spray method or the like are given as a droplet dischargemethod. Note that a droplet discharged by an ink-jet method is not inkused for printed materials but is an object including a metal materialor an insulating material is used.

Then, after removing the mask, temporary baking is carried out. Notethat a metal material mistakenly formed over the mask is also removedwhen the mask is removed. In addition, it is preferable that thematerial of the mask is water repellent properties. In this step, thewiring is made to form to swell higher than the surface of theinsulating film. Afterwards, it is performed by a planarizingprocessing, for example, a press or a CMP processing. Of course, the CMPprocessing may be performed after pressing, or the pressing is performedafter the CMP processing.

In particular, when the thickness of the wiring is larger than the widththereof, the thickness of the wiring can be adjusted by grinding theinsulating film in a CMP processing, and a wiring with uniform wiringresistance can be obtained even between different substrates.

When a CMP processing is carried out with the use of slurry and thelike, difference of elevation in a depression and a projection (P-Vvalue: Peak to Valley, difference in height between a maximum value anda minimum value) is decreased, in other words, the depression and theprojection are planarized. Note that the P-V value of the depression andthe projection may be observed with an AFM (atomic force microscope).Specifically, the P-V value of the depression and the projection on asurface to be processed is about 20 nm to 70 nm. The P-V vale of theprojection and the depression on a surface can be decreased less than 20nm, preferably 5 nm or less. Here, the surface to be processed indicatesa surface including an upper surface of the embedded wiring and an uppersurface of the insulating film.

In addition, a film thickness of the wiring depends on a thickness ofthe insulating film by making the insulating film harder than thewiring, and thus, a flat surface is obtained. Moreover, even whenpressing is conducted, a wiring width is not broadened by the existenceof the insulating film being in contact with a side surface of thewiring. Further, by pressing, density of the wiring is increased, andthe resistor can be decreased. Baking is carried out along withplanarizing by a hot pressing. Alternatively, baking is carried outafter planarization. By using the hot-press capable of beating bothsides of the substrate simultaneously, increase in P-V value of thedepression and the projection due to baking can be controlled. Then, agate insulating film and a semiconductor film are formed sequentially tomanufacture a TFT.

In addition, the wiring width depends on precision of the depression bya mask; therefore, a desired width can be obtained regardless of anamount and viscosity of droplet to be dropped and a nozzle diameter.Generally, a wiring width dependent on a contact angle of a liquidmaterial discharged from a nozzle to a substrate. For example, an amountof the material solution discharged from one nozzle diameter (50 μm×50μm) of a standard ink-jet device is from 30 pl to 200 pl, and a wiringwidth to be obtained is from 60 μm to 600 μm. On the other hand,according to the invention, an embedded wiring with small width (forexample, an electrode width of from 1 μm to 10 μm) and large thickness(for example, from 1 μm to 100 μm) can be obtained. The width of theembedded wiring of the invention can be narrowed down to the limit ofphotolithography technique, and the thickness thereof can be thicken byconducting film formation as thick as possible. In order to narrow thewiring width and to reducing wiring resistor, the embedded wiring ofwhich thickness is longer than the width thereof is preferable. However,it is necessary to form a contact hole to connect to a wiring in anupper layer; therefore, it is preferable that the width of the wiring islonger than the diameter of the contact hole. When a diameter of acontact hole is 1 μm or more, adequate contact resistor can be obtained.

In addition, when a diameter of the nozzle is smaller than standard, anamount of a material solution discharged from one nozzle is from 0.1 plto 40 pl, and the wiring width to be obtained is from 5 μm to 100 μm. Adepression and a projection are likely occurred on a surface of a wiringobtained by a nozzle with small diameter after baking. However, thesurface of the wiring can be planarized since a planarizing process suchas a pressing or a CMP is performed on the embedded wiring of theinvention. A depression and a projection of from 20 nm to 70 nm isoccurred by baking on a surface of a wiring obtained by a dropletdischarge method.

In particular, when a wiring obtained by a droplet discharge method isused as a gate wiring of a bottom gate type TFT, there is a risk thatelectric field concentration is generated in projection to cause ashort-circuit if a surface has a depression and projection. Thus, it isimportant that a planarizing process is red out to flatten a surface ofa gate wiring. Additionally, it is possible to prevent a short-circuitby providing the gate insulating film much thicker than a depression anda projection of the surface of the gate wiring; however, it may be acause of increase in a driving voltage of a TFT and further, increase ina power consumption. According to the invention, a gate insulating filmwith a film thickness of from 1 nm to 200 nm, preferably from 10 nm to30 nm can be obtained by planarizing the surface of the gate wiring.

In addition, when the material pattern is formed by a droplet dischargemethod, there are two cases: a case in which a material droplet isdischarged intermittently from the nozzle and is dropped in a dot shape,and a case in which a string of material, formed of series of dots,discharged continually adheres. In the present invention, a materialpattern may be formed by either pattern appropriately. In addition,instead of an ink-jet nozzle, a spray nozzle and a dispenser nozzle canbe used.

The bottom gate type TFT using thus obtained embedded wiring as a gatewiring can lower resistance. Typically, a surface over which a metalwiring is formed has a structure in which a wiring width is protruded bythe thickness. However, a coverage defect or the like is not likely tooccur even when the gate insulating film and the semiconductor film isthinned down since the embedded wiring is used in the invention.

According to one structure of the invention disclosed in thisspecification, a semiconductor device comprises an insulating layer andat least one of a gate wiring and a gate electrode formed over asubstrate having an insulating surface, a gate insulating film formedover one of the gate wiring and the gate electrode, and an active layerof a thin film transistor including at least a channel formation regionover the gate insulating film, a source wiring and an electrode formedover the active layer, and a pixel electrode formed over the electrode,wherein one of the gate wiring and the gate electrode contains a resinand has the same film thickness as that of the insulating layer.

According to another structure disclosed in this specification, asemiconductor device comprises a base layer formed over a substratehaving an insulating surface, an insulating layer and at least one of agate wiring and a gate electrode formed over the base layer, a gateinsulating film formed over one of the gate wiring and a gate electrode,and an active layer of a thin film transistor including at least achannel formation region over the gate insulating film, a source wiringand an electrode formed over the active layer, and a pixel electrodeformed over the electrode, wherein one of the gate wiring and the gateelectrode contains a resin and has the same film thickness as that ofthe insulating layer.

According to the above structure, the base layer comprises a materialselected from the group consisting of a transition metal, an oxide ofsaid transition metal, a nitride of said transition metal, and anoxynitride of said transition metal.

According to the above structure, the transition metal comprises amaterial selected from the group consisting of Sc, Ti, Cr, Ni, V, Mn,Fe, Co, Cu, Zn.

Additionally, according to the above structure, the active layer of thethin film transistor is a non-single crystalline semiconductor film or apolycrystalline semiconductor film added with hydrogen or halogenhydrogen.

As an active layer of a thin film transistor, an amorphous semiconductorfilm, a semiconductor film including a crystal structure, a compoundsemiconductor film including an amorphous structure or the like can besuitably used Further, as the active layer of the TFT, a semiamorphoussemiconductor film (also referred to as microcrystal semiconductorhaving) an intermediate structure between a semiamorphous structure anda crystalline structure (including a single crystalline andpolycrystalline structure), which is a semiconductor having a tertiarystate which is stable in a view of free energy, including a crystallineregion having a short-distance order and lattice distortion. Inaddition, at least some region of the film includes a crystal grain offrom 0.5 nm to 20 nm. The Raman spectrum is shifted to the wave numberside lower than 520 cm⁻¹. Diffraction peaks of (111) or (220) derivedfrom Si crystalline lattice are observed in X-ray diffraction of thesemiconductor film. Hydrogen or halogen is included at least 1 atom % ormore as a neutralizer for an uncombined hand (dangling bond). As amethod for manufacturing the semiamorphous semiconductor film, it isformed by performing grow discharging decomposition (plasma CVD) of asilicide gas. For the silicide gas, it is possible to use SiH₄,additionally, Si₂H₆, SiH₂Cl₂, SiHCl₃, SiCl₄, SiF₄ or the like. Thissilicide gas may be diluted with H₂, or H₂ and one or more kinds of therare gas elements: He, Ar, Kr and Ne. A Dilution ratio ranges from 2times to 1000 times. Pressure ranges approximately from 0.1 Pa to 133Pa, power frequency ranges from 1 MHz to 120 MHz, preferably, from 13MHz to 60 MHz. Substrate heating temperature may be 300° C. or less,preferably, temperatures from 100° C. to 250° C. As for an impurityelement in a film, it is preferable that impurities of atmosphericcomponent such as oxygen, nitrogen or carbon are set 1×10²⁰ atoms/cm⁻¹or less, in particular, the oxygen concentration is set 5×10¹⁹ atoms/cm³or less, preferably, 1×10¹⁹ atoms/cm³ or less. Note that electric fieldeffect mobility of a TFT (a thin film transistor) having a semiamorphoussemiconductor layer as the active layer is about 5 cm²/Vsec to 50cm²/Vsec.

According to each of the above structure, the width of the gateelectrode of the thin film transistor is from 5 μm to 100 μm since theembedded wiring is formed by a droplet discharge method. Additionally, abottom gate type TFT realizing a gate electrode with small width can bemanufactured; therefore, in each structure, a channel length of the thinfilm transistor can be set to 5 μm to 100 μm.

According to each of the above structure, the length of the gateelectrode width of the thin film transistor is shorter than that of thethickness of the gate electrode of the thin film transistor. In order tonarrow a wiring width and to lowering a wiring resistance, an embeddedwiring is preferable to have a larger thickness than width.

According to each of the above structure, a surface including an uppersurface of the gate wiring or the gate electrode and a surface includingan upper surface of the insulating layer are in the same plane. The gatewiring and the gate electrode are embedded wirings. The insulating layerhere indicates an insulating material pattern formed in the same step.Further, the gate wiring and the gate electrode indicate metal layersembedded in the insulating layer.

According to each of the above structure, a P-V value of the projectionand a depression on the upper surface of the insulating layer is lessthan 20 nm. Planarity of an orientation film in a liquid crystal displaydevice and planarity of an anode surface in a light emitting device canbe ensured by improving planarity of an upper surface of the insulatinglayer.

According to each of the above structure, a P-V value of the projectionand a depression on the upper surface of the insulating layer is lessthan 20 nm. A gate insulating film can be thinned by improving planarityof the gate electrode or an upper surface of the gate electrode.

According to each of the above structure, the semiconductor devicecomprises a liquid crystal display device including a second substrateopposing to the substrate and a liquid crystal interposed between a pairof substrates composed of the substrate and the second substrate.

Alternatively, according to each of the above structure, thesemiconductor device comprises a light emitting device including aplurality of light emitting elements having a cathode, a layercontaining an organic compound and an anode.

According to each of the above structure, the semiconductor device is aninteractive video/audio communication device or a general-purpose remotecontrol device.

According to another structure of the invention for realizing the abovestructures, a method for manufacturing a semiconductor device comprisesthe steps of: forming a base film or carrying out a base pretreatmentover a first substrate having an insulating surface; forming aninsulating film over the substrate; forming a mask over the insulatingfilm; forming a depression by selectively etching the insulating film;forming an embedded wiring in the depression by a droplet dischargemethod; removing the mask; performing a planarization processing to anupper surface of the embedded wiring; forming a gate insulating filmover the electrode; and forming a semiconductor film over the gateinsulating film.

According to the structure regarding the above manufacturing step, thebase layer is used as an etching stopper in the step of forming thedepression by selectively etching the insulating film

According to the structure regarding the above manufacturing step, theplanarizing process is a press treatment, a heat press treatment or aCMP processing which presses the insulating film and the embedded wiringwith a press member. Alternatively, the planarization processing is aheat press treatment in which the baking of the embedded wiring isperformed by carrying out heating and pressing simultaneously. In caseof using a heat press treatment capable of heating both sides of thesubstrate at the same time, shorter baking time is possible compared tothe case of baking the wiring just with an oven or a hot plate.

According to the structure regarding the above manufacturing step, thestep of forming a mask over the insulating film comprises a step offorming a first material layer soluble in a first solvent and a secondmaterial layer soluble in a second solvent surrounding the firstmaterial layer are formed with a device provided with a plurality ofnozzles which can discharge different materials, and a step of forming amask comprising the first material film by removing the second materialalone by the second solvent.

There is a risk that an accurate pattern of the mask is difficult toobtain due to dripping in the case where a resist material has highfluidity or in the case where the resist material increases its fluidityin baking when the mask is formed by a droplet discharge method.Therefore, the dripping may be prevented by using a material (forexample, water-soluble resin) which includes a solvent different fromthat of the material for forming a mask (resist or the like) and bydropping the material onto a pattern region to be opened. Preferably, byusing a droplet discharge device provided with a plurality of nozzleunits which can discharge resist and a water-soluble solution, intervalsbetween a step of discharging the resist and a step of discharging thewater-soluble solution are shorten. In this case, the resist and thewater-soluble solution are discharged according to the same alignmentposition; therefore, there is less pattern misalignment. Further, whenwashing is carried out by using water after baking, the water-solubleresin is removed alone, and an accurate mask pattern can be obtained.

When a droplet discharge device provided with a plurality of nozzleunits capable of discharging an insulating material and a metalmaterial, the discharge is carried out according to the same alignmentposition; therefore, an interlayer insulating film and a connectionelectrode are formed without pattern misalignment.

Conventionally, when the material and further photomask are different,alignment of an insulating material and alignment of a metal material isrequired to conduct respectively, since alignment is regulated for ineach case. Accordingly, pattern misalignment is likely to occur.

According to the structure regarding the above manufacturing step, theembedded wiring is one of a gate electrode and gate wiring of a thinfilm transistor.

As an example shown in FIGS. 10A and 10B, the gate electrode and thegate wiring may be formed separately so that the gate electrode with asmall width is in contact with the gate wiring with a large width. Thewidth of the gate electrode may be set to from 5 μm to 20 μm; the widthof the gate wiring, 10 μm to 40 μm, so that a ratio between the width ofthe gate electrode and that of the gate wiring is 1:2. For example, thegate electrode alone is formed by a droplet discharge method by using anink-jet head having a small nozzle diameter in a depression formed in ainsulating film. After planarization such as press step, the gate wiringis formed by using an ink-jet head having a large diameter so as tooverlap with a part of the gate electrode. By forming the gate electrodeand the gate wiring separately, throughput can be improved.

The invention can be applied regardless of a TFT structure, for example,a bottom gate type (inverted staggered type) TFT and a staggered typeTFT can be used. Additionally, the invention is not limited to a TFThaving a single gate structure, a multi gate type TFT having a pluralityof channel formation regions, for example a double gate type TFT isacceptable.

Further, a TFT having a dual gate structure in which gate electrodes areformed over and under semiconductor layers, and channels (dual channel)are formed over and under one of the semiconductor layers.

According to the present invention, manufacture of a display displayinga large area can be realized without spin coat method, by using anembedded wiring formed by a droplet discharge method. Compared to a spincoat method, a droplet discharge method can reduce a material solutionto lower a production cost.

Further, a heater can contact with a substrate at the same time withplanarization of the embedded wiring by a heat press; therefore, uniformbaking can be carried out in a short time. Accordingly, productivity isimproved.

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1A to 1F are cross-sectional views each illustrating amanufacturing step of AM-LCD;

FIGS. 2A to 2D are cross-sectional views each showing a manufacturingstep of AM-LCD;

FIG. 3 is a top view showing a pixel;

FIGS. 4A and 4B are views each showing a wet processor;

FIGS. 5A and 5B are cross-sectional views each showing a press device;

FIGS. 6A to 6E are cross-sectional views each illustrating a step offorming a mask;

FIG. 7 is a perspective view showing a droplet discharge device;

FIGS. 8A to 8C are views each showing a step of pattern formation by adroplet discharge method;

FIG. 9 is a perspective view showing a showing deposition device;

FIGS. 10A and 10B are top views each showing a pixel (Embodiment 1);

FIGS. 11A, 11C and 11D are cross-sectional views each showing carryingout a liquid crystal drop by a droplet discharge method; and FIG. 11Dare a perspective view showing carrying out a liquid crystal drop by adroplet discharge method (Embodiment 2);

FIGS. 12A to 12D are top views each showing a process (Embodiment 2).

FIGS. 13A and 13B are cross-sectional views each showing a pastingdevice and a pasting process (Embodiment 2);

FIGS. 14A and 14B are top views each showing a liquid crystal module(Embodiment 2);

FIG. 15 is a block diagram showing a driver circuit (Embodiment 2);

FIG. 16 is a circuit diagram showing a driver circuit (Embodiment 2);

FIG. 17 is a circuit diagram showing a driver circuit (Embodiment 2);

FIG. 18 is a cross-sectional structural view showing an active matrixliquid crystal display device (Embodiment 2);

FIG. 19 is a cross-sectional view showing a liquid crystal displaydevice (Embodiment 3);

FIGS. 20A to 20E are cross-sectional views each illustrating a step ofmanufacturing a light emitting device;

FIGS. 21A to 21D are cross-sectional views each illustrating a step ofmanufacturing a light emitting device;

FIG. 22 is a top view showing a pixel;

FIGS. 23A to 23E are cross-sectional views each illustrating a step forforming a mask;

FIG. 24 is a top view showing a light emitting display device accordingto a certain aspect of the present invention;

FIG. 25 is a top view showing a light emitting display device accordingto a certain aspect of the present invention;

FIG. 26 is a cross-sectional view showing an example of a light-emittingdevice;

FIGS. 27A to 27F are circuit diagrams each showing a structure of thepixel applicable to an EL display panel; and

FIGS. 28A to 28D are views showing an example of an electronic device.(Embodiment 4)

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment mode of the present invention is described hereinafter.

Embodiment Mode 1

Here, FIGS. 1A to 1E and 2A to 2D are views illustrating examples ofmanufacturing an active matrix liquid crystal display device in which achannel etch type TFT is used as a switching element.

First, a base layer 11 for improving adhesiveness to a material layer tobe formed later by a droplet discharge method is formed over a substrate10. The base layer 11 does not always need to have a layer structure aslong as it is formed very thin. Accordingly, the formation of the baselayer 11 can be regarded as base pretreatment. Photocatalystic substance(titanium oxide (TiO_(x)), strontium titanate (SrTiO₃), cadmium selenide(CdSe), potassium tantalate (KTaO₃), cadmium sulfide (CdS),zirconiumoxide (ZrO₂), niobium oxide (Nb₂O₅), zinc oxide (ZnO), ferricoxide (Fe₂O₃), tungsten oxide (WO₃)) may be applied over an entiresurface with a spray method or a sputtering method. Alternatively, atreatment to selectively form an organic material (polyimide; acrylic;or an applied insulating film using a material, in which a skeletalstructure is configured by bonding silicon (Si) and oxygen (O), at leastcontaining one kind of hydrogen, fluorine, alkyl, or aromatichydrocarbon in a substituent) may be carried out by using an ink-jetmethod or a sol-gel method.

A photocatalystic indicates a material which has a photocatalyticfunction. The photocatalystic is activated when it is irradiated withlight in an ultraviolet light region (wavelength: 400 nm or less,preferably, 380 nm or less). A minute pattern can be drawn bydischarging a conductor contained in a solvent on the photocatalystic byan ink-jet method.

For example, TiO_(x) is not hydrophilic but oleophilic, that is, waterrepellent before being irradiated with light. Light irradiation causesphotocatalytic activity, and TiO₂ is converted into hydrophilic andnon-oleophilic, that is, oil repellent. Note that TiO₂ can behydrophilic and oleophilic at the same time depending on a length ofirradiation time.

Note that hydrophilic means a state which is easy to get wet with waterand has a contact angle of 30° or less. Specifically, a state having acontact angle of 5° or less is referred to as super-hydrophilic. On theother hand, water-repellent means a state which is hard to get wet withwater and has a contact angle of 90° or more. Similarly, oleophilicmeans a state which is easy to get wet with oil, and “oil-repellent”means a state which is hard to get wet with oil. Note that the contactangle means an angle made by a formation face and a tangent to a dropleton the edge of a dropped dot.

In case of using a water-based solvent, it is preferable to add asurfactant in order to smoothly discharge a droplet from a nozzle of anink-jet nozzle. In stead of the ink-jet nozzle, a fog generating nozzleor a dispenser nozzle also can be used.

In case of discharging a conductor mixed into an oil (alcohol) basedsolvent, a wiring can be similarly formed by discharging a conductoronto a region which is not irradiated with light (hereinafter referredto as a non-irradiation region) and discharging a dot from the above ofthe non-irradiation region or to the non-irradiation region.

Note that a nonpolar solvent or a low polar solvent can be used as theoil (alcohol) based solvent. For example, terpineol, mineral spirit,xylene, toluene, ethyl benzene, mesitylene, hexane, heptane, octane,decane, dodecane, cyclohexane, or cyclooctane can be used.

Further, photocatalytic activity can be improved by doping a transitionmetal (such as Pd, Pt, Cr, Ni, V, Mn, Fe, Ce, Mo, or W) into thephotocatalytic substance, and photocatalytic activity can be caused bylight of a visible light region (wavelength: from 400 nm to 800 nm).This is because the transition metal can form a new level within aforbidden band of an active photocatalystic having a wide band gap andcan expand a light absorption range to a visible light region. Forexample, an acceptor type such as Cr or Ni, a donor type such as V orMn, an amphoteric type such as Fe, or other types such as Ce, Mo, or Wcan be doped. A wavelength of light can thus be determined depending onthe photocatalytic substance. Therefore, light irradiation means toirradiate with light having such a wavelength that photocatalyticallyactivates the photocatalytic substance.

When the photocatalytic substance is heated and reduced in a vacuum orunder reflux of hydrogen, an oxygen defect is generated in crystal.Without doping a transition element, an oxygen defect plays a similarrole to an electron donor in this way. Specifically, in case of formingwith a sol-gel method, the photocatalytic substance may not be reducedsince an oxygen defect exists from the beginning. In addition, an oxygendefect can be formed by doping a gas of N₂ or the like.

Here, an example of carrying out base pretreatment for improving theadhesiveness in case of discharging a conductor over the substrate isshown without particularly limited thereto. A TiOx film may be formed toimprove the adhesiveness between the material layers in the case where amaterial layer (for example, an organic layer, an inorganic layer, or ametal layer) is formed by a droplet discharge method, or the case wherea material layer (for example, an organic layer, an inorganic layer, ora metal layer) is further formed over discharged conductive layer bydroplet discharge method. In other words, in case of making patterns bydischarging a conductor by a droplet discharge method, it is desirableto perform a base pretreatment over and under the interface of theconductive material layer in order to improve the adhesiveness.

In addition, 3d transition metal (Sc, Ti, Cr, Ni, V, Mn, Fe, Co, Cu, Znor the like), the oxide, nitride or oxynitride thereof can be used asthe base layer 11, without being limited to a photocatalytic material.

Besides a non-alkaline glass substrate such as a barium borosilicateglass, an alumino borosilicate glass, or aluminosilicate glassmanufactured with a fusion method or a floating method, a plasticsubstrate or the like having the heat resistance that can withstandprocessing temperature or the like can be used as the substrate 10.Further, a substrate such as a semiconductor substrate such as singlecrystal silicon, a metal substrate such as stainless steel or a ceramicsubstrate provided with an insulating layer on the surface thereof maybe applied in case of a reflective liquid crystal display device.

Subsequently, an insulating film is formed over an entire surface with asputtering method, a CVD method or a droplet discharge method. For thisinsulating film, an inorganic material (silicon oxide, silicon nitride,silicon oxynitride or the like), a photosensitive or non-photosensitiveorganic material (polyimide, acryl, polyamide, polyimide amide, resistor benzocyclobutene) or a lamination thereof or the like can be used. Inaddition, as the insulating film, a SiOx film including the alkyl groupwhich is obtained by using siloxane-based polymer may be applied. Athickness and electrical resistivity of a gate wiring subsequentlyformed is determined by the width as width of the insulating film. Incase of forming a liquid crystal display device having a large-areascreen, it is desirable to form a gate wiring with low resistance. Athickness of the insulating film may be thick, for example, it may beset to from 1 μm to 100 μm. Here, thickness of the insulating film isset to 5 μm. In addition, the insulating film with preferableadhesiveness is formed by the base layer 11.

Subsequently, a mask 13 comprising photopolymer (typically resist) isformed. The mask 13 is formed by a droplet discharge method or aprinting method (relief printing, flat plate, copperplate printing,screening equipment or the like). Although a desired mask pattern may beformed directly by a droplet discharge method or a printing method, inorder to formed in high definition, it is desirable that a desirablemask pattern is obtained by using a resist removing apparatus shown inFIGS. 4A and 4B and carrying out exposure using the photomask afterforming a resist film over an entire surface by a droplet dischargemethod or a printing method.

A resist removing apparatus shown in FIGS. 4A and 4B can develop andwash the substrate without making the substrate spin. FIG. 4A is a sideview, resist removing solution is discharged from resist removingnozzles 381 while a large-area substrate 300 which is fixed to asubstrate support 384 is carried. Four pieces of a pixel portion 302 canbe obtained to be manufactured from the large-area substrate 300. Then,washing water is jetted from deionized water nozzles 382, and gas isjetted from blow nozzles 383. The large-area substrate 300 is disposedslantingly to have an angle of θ as shown in FIG. 4B of across-sectional view. The angle θ can range of 0°<θ<90°, preferably45°<θ<80°. In FIG. 4B, reference numeral 303 denotes a resist film.Resist removing solution discharged from a plurality of resist removingsolution nozzles 380 to the resist film 303 flows along the substratesurface by gravity. Additionally, the angle θ is set to 90°<θ<120°, andresist removing solution can be jetted from a plurality of resistremoving solution nozzles 381 with high pressure. In this case, thesolution drops without flowing on the substrate 300; accordingly,unevenness of the solution can be avoided. Similarly, washing water isjetted from the deionized water nozzles 382, and gas is jetted from theblow nozzles 383 with high pressure.

Subsequently, an insulating layer 14 is formed by selectively etchingthe insulating film to form a depression 12 (FIG. 1A). In this etching,a material of an insulating film, an etchant and etching gas aresuitably adjusted so that the base layer 11 functions as an etchingstopper.

Subsequently, material solution is dropped toward a depression by adroplet discharge method, typically an ink-jet method with the mask 13left. Afterwards, baking is carried out in an oxygen atmosphere, therebyforming a gate electrode or a metal wiring 15 which includes resinserving a gate electrode or a gate wiring (FIG. 1B). An accurate patternshape, particularly, a wiring with small width can be obtained since adepression is formed on the insulating layer 14 beforehand. Here, thewidth of the metal wiring 15 including resin to be a gate wiring is set1 μm. Note that FIG. 1B shows a state of a substrate before temporarybaking. Even if an extra droplet 16 is left on the mask 13, it can beremoved simultaneously in a subsequent step of removing the mask sincebaking can be curried out being isolated from the metal wiring bysetting the mask lyophobic.

Additionally, a wiring with large width can be obtained simultaneously.A wiring 40 extending toward a terminal portion is formed in the samemanner as the metal wiring 15 including resin. Here, the width of thewiring 40 extending toward the terminal portion is set to 30 μm. Inaddition, although it is not shown here, a capacitor electrode or acapacitor wiring for forming a storage capacitor is formed, ifnecessary.

As the wiring material, any one of gold (Au), silver (Ag), copper (Cu),platinum (Pt), palladium (Pd), tungsten (W), nickel (Ni), tantalum (Ta),bismuth (Bi), lead (Pb), indium (In), tin (Sn), zinc (Zn), titanium(Zn), or aluminum (Al); an alloy thereof; dispersed nanoparticlesthereof; or silver halide particles is used. In particular, the gatewiring is preferable to be low resistance. Therefore, a material inwhich any one of gold, silver, or copper dissolved or dispersed in asolvent is preferably used, and more preferably silver or copper withlow resistance is used in consideration of a specific resistance value.However, in case of using silver or copper, a barrier metal film (Ta,TaN, Ti, TiN, W, WN or the like) may be additionally provided in orderto prevent a metal element (silver or copper) from dispersing. A solventcorresponds to ester such as butyl acetate, alcohols such as isopropylalcohol, an organic solvent such as acetone or the like. Surface tensionand viscosity are appropriately adjusted by adjusting of a concentrationof the solvent and adding a surfactant or the like.

In addition, a metal wiring may be formed by a droplet discharge methodby dispersing or dissolving particles which is a combination of theabove metal materials, for example metal particles in which a peripheryof copper is coated with silver, in a solvent. A periphery of copper iscoated with silver; thus, adhesiveness can be improved in case offorming a base film or performing base pretreatment. Additionally, thedepression and projection of copper can be made smooth by coating withsilver. Alternatively, a metal wiring may be formed by a dropletdischarge method by dispersing or dissolving metal particles in which aperiphery of copper is coated with a buffer layer (Ni or NiB) to befurther coated with silver entirely in a solvent. Note that the bufferlayer is provided in order to increase adhesiveness between copper (Cu)and silver (Ag).

A diameter of a nozzle used in a droplet discharge method is set to from0.02 μm to 100 μm (preferably, 30 μm or less), and a discharging amountof a composition discharged from the nozzle is preferably set to from0.001 pl to 100 pl (preferably, 10 pl or less). There are two types ofan on-demand type and a continuous type for a droplet discharge method,both of which may be used. Furthermore, as a nozzle to be used in adroplet discharge method, there is a piezoelectric system usingproperties transformed by applying voltage and a heating system boilinga composition by a heater provided in a nozzle and discharging thecomposition, and both of which may be used. A spacing between a subjectand a discharge opening of a nozzle is preferable to be made as close aspossible to drop a droplet in a desired place, which is preferably setto from 0.1 mm to 3 mm (preferably, 1 mm or less). While keeping therelative spacing, one of the nozzle and the subject moves and a desiredpattern is drawn. In addition, plasma treatment may be carried out on asurface of the subject before discharging a composition. This is to takeadvantage of a surface of the subject becoming hydrophilic and lyophobicwhen plasma treatment is carried out. For example, it becomeshydrophilic to deionized water and it becomes lyophobic to a pastedissolved with alcohol.

A step of discharging a composition may be carried out under a lowpressure so that a solvent of the composition can be volatilized whilethe composition is discharged and hit on a subject and that later stepsof drying and baking can be skipped or shorten. After discharging thecomposition, either or both steps of drying and baking is carried out byirradiation of laser light, rapid thermal annealing, heating furnace orthe like under the atmospheric pressure or the low pressure. Both thesteps of drying and baking are steps of heat treatment. For example,drying is carried out at 100° C. for 3 minutes and baking is carried outat temperatures from 200° C. to 350° C. for from 15 minutes to 120minutes, of which object, temperature, and time are different. In orderto carry out the steps of drying and baking well, the substrate may beheated, of which temperatures are set to from 100° C. to 800° C.(preferably, temperatures from 200° C. to 350° C.), though depending ona material of a substrate or the like. Through this step, a solvent in acomposition is volatilized or dispersant is removed chemically, and aresin around cures and shrink, thereby accelerating fusion and welding.In other words, the baked wiring and the electrode include resin. Thestep of drying and baking are carried out under the oxygen atmosphere,the nitrogen atmosphere, or the atmosphere. However, this step ispreferable to be carried out under an oxygen atmosphere in which asolvent decomposing or dispersing a metal element is easily removed.

The adhesiveness of a metal film which is formed by a droplet dischargemethod can be significantly improved by forming the base film or bycarrying out base pretreatment. The metal layer can be withstood even itis soaked in rare hydrofluoric acid (diluted 1:100) for one minute ormore; therefore, sufficient adhesiveness can be obtained even in a tapepeeling test.

In addition, adhesiveness of the metal layer can be improved also in asidewall by making the insulating layer 14 a lyophilic material ormaking the sidewall of the insulating layer 14 lyophilic.

Subsequently, the mask 13 comprising a resist is removed. In this stage,a metal layer may be upheaved higher than a surface of the insulatinglayer. After discharging solvent (thinner or the like) from a nozzle byusing a similar device shown in FIGS. 4A and 4B, washing and drying maybe carried out sequentially. In addition, ultrasonic cleaning may becarried out as well as washing.

Subsequently, a planarizing process, for example, a press or achemical-mechanical polishing thereinafter referred to as CMP) iscarried out (FIG. 1C).

An example of a hot-press device pressurizing automatically is shown inFIG. 5A. The hot-press device comprises a pair of top and bottom hotplates 52 and 53, and a sample is sandwiched between the pair ofhotplates to be pressed by moving the top hotplate 53 downward.Pressurization is carried out at a pressure in a range (bearing of from0.5 kgf/cm² to 1.0 kgf/cm²) where a glass substrate is not broken.Heaters 58 a and 58 b are incorporated in the hot plates 52 and 53,respectively, and the hot plate on lower side is fixed. The top hotplate 53 is placed with supports 55 a and 55 b to be moved up and downfreely. With the hot plates 52 and 53, a top plate 54 provided with aTeflon coat film 56 on the surface thereof and a substrate 51 providedwith a layer to be processed 57. Here, the layer 57 to be processedindicates the insulating layer 14 and the metal wiring 15. An exposuresurface of the metal wiring 15 is conformed to an exposure surface ofthe insulating layer 14 by planarization by pressing. A pattern of themetal wiring 15 is not stretched since the insulating layer 14 maintainsthe thickness and width even after pressing. Baking can be carried outin a short time by pressing a temporary-baked substrate and heating upto a baking temperature with the substrate pressed. In a large-areasubstrate, a huge baking chamber is required; therefore, a bakeprocessing time is likely to get longer when whole baking chamber isheated.

An example of another pressurizing device is shown in FIG. 5B, which isdifferent from the one shown in FIG. 5A. A substrate 61 is sandwichedbetween a roller 62 and a feed roller 63. By using pressurizing means(not shown in the figure), the substrate 61 is pressed by pressurizationwith the feed roller 63 driven and rotated. The roller 62 has a metalliccylindrical body provided with a teflon coat film 66 on its surface, andarranged opposite to the feed roller 63 to make a pair therewith. Then,roller conveyers 64, in which a plurality of conveyance rollers aredisposed, rotated by driving means are provided in the vicinity of thefeed roller 63 to feed and carry out the substrate 61. Additionally, thesubstrate is provided with a layer 67 to be pressed. Further, a sheathedheater with thermoregulation ability may be provided inside the roller62 and the feed roller 63 so that a surface of the roller can be keptheated.

Either of the press devices can carry out planarization by pressing. Incase of carrying out hot-press for a long time or at high temperature,the press device shown in FIG. 5A is suitable. On the other hand, incase of carrying out hot-press for a short time or at low temperature,the press device shown in FIG. 5B is suitable. Note that the Teflon coatfilms 56 and 66 are provided, preventing adhesiveness of a componentmaterial of a layer to be processed are provided in both press devices.

Here, another manufacturing step is described with reference to FIGS. 6Ato 6E. In a droplet discharge method, a device capable of dischargingmaterials of different kind from a plurality of nozzles is used. A stepin which the base layer 11 is formed over the substrate 10 to form aninsulating layer 74 is the same as the above-mentioned steps; therefore,it is not described. A water-soluble resin 77 and a mask 73 comprising aresist are discharged over the insulating layer 74 with the same deviceas illustrated in FIG. 6A. The water-soluble resin 77 is used forpreventing pattern deformation in the case where a resist material hashigh fluidity or in the case where the resist material increases itsfluidity in baking. Additionally, the water-soluble resin 77 protects aregion where resist is unnecessary, for example a periphery of thesubstrate. Then, after baking or photo-curing, washing is carried outwith water to remove the water-soluble resin alone as illustrated inFIG. 6B. Note that FIG. 6B shows a state before temporary baking. Byusing thus obtained mask 73, a fine pattern may be obtained byselectively etching the insulating layer 74 as illustrated in FIG. 6C.Subsequently, wirings 75 and 40 are formed by a droplet discharge methodas illustrated in FIG. 6D, and an extra droplet 76 adhering to the mask73 and the mask are removed simultaneously. Afterwards, planarization iscarried out by pressing as illustrated in FIG. 6E. In case of adopting astep of forming a resist mask illustrated in FIGS. 6A to 6E, the mask 73has a structure in which the end thereof has a curvature. Accordingly,the spacing between the extra droplet 76 and the wiring 75 can befurther broadened. The water-soluble resin is described as an example.However, without limiting thereto, after forming a material including asolvent other than water, which is insoluble in a mask, the materialalone may be solved in the solvent.

Either steps illustrated in FIGS. 6A to 6E or FIGS. 1A to 1C may beused.

Subsequently, a gate insulating film 18, a semiconductor film and ann-type semiconductor film are formed sequentially by using a plasma CVDmethod or a sputtering method. In this embodiment mode, an embeddedwiring having a flat surface even over a wiring is used; therefore, acoverage defect is not occurred even when each film thickness is small.For example, a thickness of the gate insulating film 18 can be set tofrom 1 nm to 200 nm by using a plasma CVD method or a sputtering method.

A material mainly containing silicon oxide, silicon nitride or siliconnitride oxide which are obtained with a PCVD method or a sputteringmethod are used as the gate insulating film 18. Preferably, the gateinsulating film 18 is thinned to be from 10 nm to 50 nm and formed witha single layer or multi layer structure of an insulating layer includingsilicon.

In this way, in case of using a plasma CVD method for forming theinsulating film with a small thickness, it is necessary to obtain thesmall film thickness with good controllability by decreasing a formationrate. For example, the deposition rate of the silicon oxide film can beset at 6 nm/min when RF power is set at 100 W, frequency is 10 kHz;pressure is 0.3 Torr; an N₂O gas flow is 400 sccm; and an SiH₄ gas flowis 1 sccm.

In addition, the gate insulating film 18 may be discharged and baked bya droplet discharge method using siloxane-based polymer to obtain a SiOxfilm including an alkyl group. Note that a film thickness is 100 nm ormore in a case of forming the gate insulating film 18 by a dropletdischarge method

The semiconductor film formed with an amorphous semiconductor film or asemiamorphous semiconductor film which is manufactured with a vaporphase growth method, a sputtering method or a thermal CVD method using asemiconductor material gas typified by silane and germanium.

As an amorphous semiconductor film, an amorphous silicon film obtainedby a PCVD method using SiH₄ or a gas mixture of SiH₄ and H₂. Further, asa semiamorphous semiconductor film, a semiamorphous silicon filmobtained by a PCVD method using a gas mixture in which SiH₄ is diluted1:3 to 1:1000 in H₂, a gas mixture in which Si₂H₆ is diluted with GeF₄with a gas flow rate of 20:0.9 to 40:0.9 (Si₂H₆:GeF₄), or a gas mixtureof Si₂H₆ and F₂ can be used. Note that a semiamorphous silicon film ispreferably used since crystallinity can be given according to theinterface with the base.

An n-type semiconductor film may be formed with a PCVD method using asilane gas and a phosphine gas, which can be formed with an amorphoussemiconductor film or a semiamorphous semiconductor film. A contactresistance of the semiconductor film and an electrode (electrode to beformed in a later step) is decreased when an n-type semiconductor film20 is provided, which is preferable. However, it may be formed ifnecessary.

Note that the gate insulating film 18, the semiconductor film and then-type semiconductor film are preferably formed selectively, which ispossible with the use of the device shown in FIG. 9. A device shown inFIG. 9 conveys a substrate 900 with a face down method, and continualfilm formation is possible with atmospheric pressure plasma CVD devices901, 902, and 903. A process gas introduction slit and a process gasdischarge slit are provided in the atmospheric pressure plasma CVDdevices 901, 902 and 903 respectively. A film can be formed when asubstrate 900 passes near a region interposed between both the slits.Note that the process gas discharge slit is provided in upstream of asubstrate transportation path 904 and the process gas introduction slitis provided in the downstream thereof. A device shown in FIG. 9 iscapable of carrying out film formation after a part of the substrate 900passes over the CVD device, one, of substrate. In a case of forming agate insulating film over an entire surface, in an active matrixsubstrate for a liquid crystal display device, it is unnecessary to etchthe gate insulating film in a pixel portion. It is necessary to removethe gate insulating film when the terminal electrode in a terminalportion is exposed. However, when the device shown in FIG. 9 is used, agate insulating film which covers only a pixel portion can be obtainedwithout forming a gate insulating film in a region where the terminalelectrode in the terminal portion is provided.

Subsequently, a mask 21 is provided, and a semiconductor film and ann-type semiconductor film are etched selectively to obtain asemiconductor film 19 and an n-type semiconductor film 20 with an islandshape (FIG. 1D). Either method illustrated in FIG. 1A and FIGS. 6A and6B may be used as forming the mask 21.

Subsequently, a composition including a conductor (Ag (silver), Au(gold), Cu (copper), W (tungsten), Al (aluminum) or the like) isdischarged by a droplet discharge method selectively to form a source ordrain wirings 22 and 23. Similarly, a connection wire (not shown in thefigure) is formed in the terminal portion (FIG. 1E). Alternatively, thesource or drain wiring 22 and 23 may be formed by patterning afterforming a metal film by a sputtering method, replacing by a dropletdischarge method.

Subsequently, an n-type semiconductor film and an upper layer of asemiconductor film are etched with the used of the source or drainwirings 22 and 23 as masks to obtain a state illustrated in FIG. 2A. Inthis stage, a channel etch type TFT comprising a channel formationregion 24, a source region 26 and a drain region 25 is completed.

Subsequently, a protective film 27 for preventing the channel formationregion 24 from being contaminated by impurity is formed. For theprotective film 27, a material mainly containing silicon nitride orsilicon nitride oxide obtained with a sputtering method or a PCVD methodis used. In addition, the protective film 27 may be formed with a CVDdevice shown in FIG. 9 selectively. Here, an example of forming aprotective film is shown; however, it is not required to be provided ifit is particularly necessary.

Subsequently, an interlayer insulating film 28 is selectively formed bya droplet discharge method. A resin material such as an epoxy resin, anacrylic resin, a phenol resin, a novolac resin, a melamine resin, or aurethane resin is used as the interlayer insulating film 28. Inaddition, the interlayer insulating film 28 is formed by a dropletdischarge method with an organic material such as benzocyclobutene,parylene, flare, or light-transmitting polyimide; a compound materialmade from polymerization such as siloxane-based polymer; a compositionmaterial containing water-soluble homopolymer and water-solublecopolymer; or the like.

Subsequently, the protective film is etched using the interlayerinsulating film 28 as a mask to form a projection (pillar) 29 includinga conductor over a part of the source or drain wirings 22 and 23. Theprojection (pillar) 29 may be laminated by repeating discharging of acomposition containing a conductor (Ag (silver), Au (gold), Cu (copper),W (tungsten), or Al (aluminum) or the like) and baking.

Subsequently, a pixel electrode 30 in contact with the projection(pillar) 29 is formed over the interlayer insulating film 28 (FIG. 1D).A terminal electrode 41 in contact with a wiring 40 is similarly formed.In case of manufacturing a light-transmitting liquid crystal displaypanel, a predetermined pattern formed of a composition containing indiumtin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), zincoxide (ZnO), tin oxide (SnO₂) or the like may be formed by a dropletdischarge method or a printing method and baked to form the pixelelectrode 30 and the terminal electrode 41. In case of manufacturing areflective liquid crystal display panel, the pixel electrode 30 and theterminal electrode 41 can be formed of a composition mainly containingparticles of a metal such as Ag (silver), Au (gold), Cu (copper), W(tungsten), or Al (aluminum) by a droplet discharge method. As anothermethod, a transparent conductive film or a light reflective conductivefilm is formed with a sputtering method, and a mask pattern is formed bya droplet discharge method; thus, the pixel electrode may be formed byfurther etching

In case of forming a pattern of relatively large area such as the pixelelectrode 30 by a droplet discharge method, there is a risk that aprojection and a depression are caused. Accordingly, it is preferablethat a surface of the pixel electrode 30 is planarized by hot-press withthe pressing device shown in FIGS. 5A and 5B. Additionally, in case ofusing a material such as indium tin oxide (ITO) which requires bakingfor crystallization as a material of the pixel electrode 30, pressingand baking can be carried out simultaneously.

FIG. 3 shows a top view of a pixel at a stage of FIG. 2D as an example.In FIG. 3, a cross-sectional view along with a chain line A-Bcorresponds with a cross-sectional view illustrated in FIG. 2D. Notethat the same reference numerals are used as the corresponding parts.

An example in which the protective film 27 is provided is describedhere; therefore, the interlayer insulating film 28 and the projection(pillar) 29 are formed separately. However, in the case where theprotective film is not provided, the interlayer insulating film 28 andthe projection (pillar) 29 can be formed by the same device (forexample, the device shown in FIGS. 7 and 8A to 8C) by a dropletdischarge method.

An example in which the protective film 27 is provided is describedhere; therefore, the interlayer insulating film 28 and the projection(pillar) 29 are formed separately. However, in the case where theprotective film is not provided, the interlayer insulating film 228 andthe projection (pillar) 229 are formed by the same device (for example,the device shown in FIGS. 7 and 8A to 8C) by a droplet discharge method.

In FIG. 7, reference numeral 1500 denotes a large-sized substrate; 1504,an imaging unit; 1507, a stage; 1511, a marker; 1503, a region where onepanel is formed. The droplet discharge device provided with heads 1505a, 1505 b and 1505 c having the same width as one panel moves a stage toscan, for example, zigzag or reciprocate these heads; thereby, a patternof a material layer suitably formed. It is possible to use heads withthe same width as the large-sized substrate; however, it is easier tooperate the heads while they are as wide as one panel of FIG. 7. Inaddition, for improving throughput, it is desirable to discharge amaterial while the stage is moved.

In addition, it is desirable to impart a thermoregulation function tothe heads 1505 a, 1505 b and 1505 c and a stage 1507.

Note that the spacing between the head (a nozzle tip) and thelarge-sized substrate is set to about 1 mm. Hitting accuracy can beenhanced by narrowing the spacing.

The heads 1505 a, 1505 b, and 1505 c arranged in three linesperpendicular to the scan direction may discharge different materialsfor respective material layers, or may discharge one material. When onematerial is discharged from the three heads to form an interlayerinsulating film having a pattern, the throughput is improved.

As to the device shown in FIG. 7, scan may be performed by moving alarge-sized substrate 1500 while a head is fixed, or moving the headwhile the large-sized substrate 1500 is fixed.

Each of the heads 1505 a, 1505 b and 1505 c of a droplet discharge unitis connected to a control unit, and the heads are controlled by acomputer; thus, a preprogrammed pattern can be applied. A dischargeamount is controlled by a pulse voltage to be applied. A droplet may bedischarged in the timing based on a marker formed on the substrate.Alternatively, a position of discharging a droplet may be determinedbased on the edge of the substrate. Such reference point is detected byan imaging unit such as a CCD to be converted into a digital signal byan image processing unit. Then, it is recognized by a computer togenerate a control signal, and the control signal is sent to a controlunit. Of course, information of a pattern to be formed over thesubstrate is placed in a recording medium. Based on this information,the control signal is sent to the control unit and each head of thedroplet discharge unit can be controlled individually.

As shown in FIG. 8, in case of forming different materials are patternedsimultaneously, a first material solution is discharged from nozzles ina first row of a nozzle unit 800 toward a substrate 801 to form a firstmaterial layer 802 in ahead. Subsequently, a second material solution isdischarged from nozzles of a second row to form a second material layer803. There is less pattern misalignment because of the same alignment.When thus discharging is carried out, and processing time is furthershortened.

FIG. 8 is a top view showing a mid-flow as a pattern is formed; FIG. 8Bis a cross-sectional view showing discharge from the first row; and FIG.8C is a cross-sectional view showing discharge from the second row.

A discharging method shown in FIGS. 8A to 8C is effective even when thesecond material layer has high fluidity since the first material layercan prevent a droplet from diffusing.

In addition, a water-soluble resin and a mask material are formed byusing the discharging method to obtain a state of FIG. 6A.

By the above-mentioned steps, a TFT substrate for a liquid crystaldisplay panel, in which a bottom gate type (also referred to as invertedstaggered type) TFT and a pixel electrode are formed over the substrate10 is completed.

Subsequently, an orientation film 34 a is formed so as to cover a pixelelectrode 30. For the orientation film 34 a, a droplet discharge method,a screen printing method or a offset printing method may be used.Afterwards, rubbing treatment is performed on a surface of theorientation film 34 a.

Then, a counter substrate 35 is provided with a coloring layer 36 a, alight shielding layer (black matrix) 36 b and a color filter comprisingan overcoat layer 37, and further, a counter electrode 38 comprising atransparent electrode and an orientation film 34 b thereover. A sealant(not shown in the figure) with a closed pattern is then formed by adroplet discharge method so as to surround a region overlapped with apixel portion. Here, an example in which a sealant with a closed patternis formed by a droplet discharge method is shown in order to drop aliquid crystal in later step. A dip coating method (pumping up method)by which a liquid crystal is injected by using capillary phenomenon maybe used after providing a seal pattern having an opening and pasting theTFT substrate and a counter substrate. In addition, a color filter canbe formed by a droplet discharge method.

Next, a liquid crystal is dropped under reduced pressure so as toprevent bubbles from entering, and the both are pasted together. Aliquid crystal is dropped once or several times in the closed-loop sealpattern. A twisted nematic (TN) mode is mostly used as an alignment modeof a liquid crystal. In this TFT mode, the alignment direction of liquidcrystal molecules is twisted at 90° according to the polarization oflight from its entrance to the exit. In case of manufacturing a TNliquid crystal display device, the substrates are pasted together sothat the rubbing directions are orthogonalized.

The spacing between the pair of substrates with a liquid crystal 39interposed therebetween may be maintained by spraying a sphericalspacer, forming a columnar spacer comprising resin, or mixing a fillerinto the sealant. The above-mentioned columnar spacer is formed of anorganic resin material mainly containing at least one material selectedfrom acrylic, polyimide, polyimideamide, and epoxy; any one material ofsilicon oxide, silicon nitride, and silicon oxynitride; or an inorganicmaterial composed of a film stack of these materials.

Next, an unnecessary substrate is divided. In case of obtaining aplurality of panels from one substrate, each panel is separated off. Incase of obtaining one panel from one substrate, the separation step canbe skipped by pasting a counter substrate which is cut in advance.

An FPC 46 is pasted to the terminal electrode 41 with an anisotropicconductive layer 45 therebetween by a known method. A liquid crystalmodule is completed through the above steps (FIG. 2D). Further, anoptical film is provided as necessary. In case of a transmissive liquidcrystal display device, polarizers are respectively pasted to both anactive matrix substrate and a counter substrate.

As described above, according to this embodiment mode, the lightexposure step using a photomask by a droplet discharge method isskipped; thus, the process can be simplified and the time of manufacturecan be reduced. A liquid crystal display panel can be easilymanufactured by even using a glass substrate after five generations, oneside of which exceeds 1000 mm by forming each kind of pattern directlyon a substrate by a droplet discharge method. A large-area panel can bemanufactured since an embedded wiring with low resistance can be formedby using a droplet discharge method.

In this embodiment mode, a process in which spin coating is not carriedout, and a light exposure with using a photomask is not carried out aspossible. However, without limitation, a part of patterning may beperformed by a light exposure step using a photomask.

Embodiment Mode 2

Here, an example of manufacturing an active matrix light emittingdisplay device using a channel etch type TFT as a switching element isshown in FIGS. 20A to 20E and 21A to 21D.

First, similarly to Embodiment Mode 1, a base layer 211 for improvingadhesiveness with a material layer formed later over a substrate 210 bya droplet discharge method.

A material selected from the group consisting of a 3d transition metal(Sc, Ti, Cr, Ni, V, Mn, Fe, Co, Cu, Zn or the like), an oxide of saidtransition metal, a nitride of said transition metal, and an oxynitrideof said transition metal can be used as the base layer 211, withoutbeing limited to photocatalystic material.

Besides a non-alkaline glass substrate such as a barium borosilicateglass, an alumino borosilicate glass, or aluminosilicate glassmanufactured with a fusion method or a floating method, a plasticsubstrate or the like having the heat resistance that can withstandprocessing temperature of this manufacturing step can be used as thesubstrate 210.

Subsequently, similarly to Embodiment Mode 1, an insulating film isformed over an entire surface with a sputtering method, a CVD method ora droplet discharge method.

As this insulating film, an inorganic material (silicon oxide, siliconnitride, silicon oxynitride or the like), a photosensitive, anon-photosensitive organic material (polyimide, acrylic, polyamide,polyimide amide, a resist or benzocyclobutene) or a lamination layerthereof or the like can be used. Alternatively, a SiOx film including analkyl group obtained by using siloxane-based polymer may be used as thisinsulating film. According to the thickness of insulating film, athickness of a gate wiring to be formed later and electrical resistivityare determined. In case of manufacturing a light emitting display devicehaving a large screen, the gate wiring with a low resistance ispreferably formed; therefore, the insulating layer may be thickened, forexample, may be thickened to from 1 μm to 100 μm. Here, a thickness ofthe insulating film is set 5 μm. Note that an insulating film withpreferable adhesiveness is formed by the base layer 211.

Subsequently, similarly to Embodiment Mode 1, a mask 213 comprisingphotosensitive resin (typically a resist) is formed. The mask 213 isformed by using a droplet discharge method or a printing method (reliefprinting, flat plate, copperplate printing, screening or the like).

Similarly to Embodiment Mode 1, an insulating layer 214 is formed byselectively etching the insulating film to form a depression 212 (FIG.20A). In this etching, a material of an insulating film, an etchant oran etching gas are suitably adjusted so that the base layer 211functions as an etching stopper.

Then, similarly to Embodiment Mode 1, material solution is dropped tothe depression by a droplet discharge method, typically an ink-jetmethod, with the mask 213 left. Afterwards, baking is carried out in anoxygen atmosphere, thereby forming metal wirings 215 a and 215 b to be agate electrode or a gate wiring (FIG. 20B). In FIG. 20B, the metalwiring 215 a denotes an electrode overlapped with a semiconductor layerformed later; the metal wiring 215 b, a wiring in contact with an upperwiring. The width of the metal wiring 215 b is wider than that of themetal wiring 215 a in order to have a contact with the upper wiring.Here, the width of the metal wiring 215 b is set 4 μm, and the width ofthe metal wiring 215 a is set 2 μm.

Since a depression is formed by the insulating layer 214 in advance, anaccurate pattern shape, particularly the metal wiring 215 a with a smallwidth can be obtained. Additionally, a wiring with a large width can beobtained at the same time. Note that FIG. 20B shows a state of asubstrate before temporary baking. Even if an extra droplet 216 is lefton the mask 213, it can be removed simultaneously with mask in a laterstep of removing mask since baking can be curried out separately fromthe metal wiring by setting the mask lyophobic.

A wiring 240 extending toward a terminal portion is formed in the samemanner as the metal wirings 215 a and 215 b. Not shown here, a powersupply line for providing a current to a light emitting element may beformed. Further, a capacitor electrode or a capacitor wiring for forminga storage capacitor is formed, if necessary.

In addition, adhesiveness of a metal layer can be improved also on asidewall by making the insulating layer 214 lyophilic or making thesidewall of the insulating layer 214 lyophilic.

Subsequently, similarly to Embodiment Mode 1, the mask 213 comprising aresist is removed. In this stage, a metal layer may be upheaved higherthan a surface of the insulating layer.

Subsequently, similarly to Embodiment Mode 1, a planarizing process, forexample a press treatment or a CMP is carried out (FIG. 20C. An exposuresurfaces of the metal wirings 215 a and 215 b are conformed to anexposure surface of the insulating layer 214 by a planarization withpressing. Each of the patterns of the metal wirings 215 a and 215 b arenot stretched since the insulating layer 214 maintains the thickness andwidth after pressing. Baking can be carried out in a short time bypressing a temporary-baked substrate and heating up to a bakingtemperature with the substrate pressed. In a large-area substrate, ahuge baking chamber is required; therefore, a bake processing time islikely to get longer when whole baking chamber is heated.

Here, another manufacturing process is described with reference to FIGS.23A to 23E. In a droplet discharge method, a device capable ofdischarging materials of different kind from a plurality of nozzles isused. A step in which the base layer 211 is formed over the substrate210 to form an insulating layer 274 is the same as the above-mentionedsteps; therefore, it is not described. A water-soluble resin 277 and amask 273 comprising a resist are discharged over the insulating layer274 with the same device as illustrated in FIG. 23A The water-solubleresin 277 is used for preventing pattern deformation in the case where aresist material has high fluidity or in the case where the resistmaterial increases its fluidity in baking. Additionally, thewater-soluble resin 277 protects a region where resist is unnecessary,for example a periphery of the substrate. Then, after baking orphoto-curing, washing is carried out with water to remove thewater-soluble resin alone as illustrated in FIG. 23B. Note that FIG. 23Bshows a state before temporary baking. By using thus obtained mask 273,a fine pattern may be obtained by selectively etching the insulatinglayer 274 as illustrated in FIG. 23C. Subsequently, wirings 275 a, 275 band 240 are formed by a droplet discharge method as illustrated in FIG.6D, and an extra droplet 276 adhering to the mask 273 and the mask areremoved simultaneously; Afterwards, planarization is carried out bypressing as illustrated in FIG. 23E. In case of adopting a process offorming a resist mask illustrated in FIGS. 23A to 23E, the mask 273 hasa structure in which the end thereof has a curvature. Accordingly, thespacing between the extra droplet 276 and the wiring 275 a can befurther broadened. The water-soluble resin is described as an example.However, without limiting thereto, after forming a material including asolvent other than water, which is insoluble in a mask, the materialalone may be solved in the solvent.

Either of the steps shown in FIGS. 23A to 23E or FIGS. 20A to 20C may beused.

Subsequently, similarly to Embodiment Mode 1, a gate insulating film218, a semiconductor film and an n-type semiconductor film are formedsequentially by using a plasma CVD method or a sputtering method. Inthis embodiment mode, an embedded wiring having a flat surface even overa wiring is used; therefore, a coverage defect is not occurred even wheneach film thickness is small. For example, a thickness of the gateinsulating film 218 can be set from 1 nm to 200 nm by using a plasma CVDmethod or a sputtering method, for example.

The semiconductor film is formed with an amorphous semiconductor film ora semiamorphous semiconductor film which is manufactured with a vaporphase growth method, a sputtering method or a thermal CVD method using asemiconductor material gas typified by silane and germanium.

An n-type semiconductor film may be formed with a PCVD method using asilane gas and a phosphine gas, which can be formed with an amorphoussemiconductor film or a semiamorphous semiconductor film. A contactresistance of the semiconductor film and an electrode (electrode to beformed in a later step) is decreased when an n-type semiconductor film220 is provided, which is preferable. However, it may be formed ifnecessary.

The gate insulating film 218, the semiconductor film, and the n-typesemiconductor film are preferably formed selectively, which is possibleby using the device shown in FIG. 9.

Subsequently, similarly to Embodiment Mode 1, a mask 221 is provided,and the semiconductor film and the n-type semiconductor film are etchedselectively to obtain a semiconductor film 219 and an n-typesemiconductor film 220 with an island shape (FIG. 20D).

Subsequently, a gate insulating film is selectively etched by providinga mask to form a contact hole. In an active matrix light emittingdevice, a plurality of TFTs is arranged in one pixel and connected withan upper wiring through a gate electrode and a gate insulating film.

Subsequently, a composition including a conductor (Ag (silver), Au(gold), Cu (copper), W (tungsten), Al (aluminum) or the like) isdischarged by a droplet discharge method selectively to form source ordrain wirings 222 and 223 and a lead-out electrode 217. Similarly, apower supply line for applying current to a light emitting element and aconnection wire (not shown in the figure) are formed in the terminalportion (FIG. 20E). Alternatively, the source or drain wirings 222 and223 and the lead-out electrode 217 may be formed by patterning afterforming a metal film by a sputtering method, replacing by a dropletdischarge method.

Subsequently, the n-type semiconductor film and an upper layer of thesemiconductor film are etched with the used of the source or drainwirings 222 and 223 as masks to obtain a state illustrated in FIG. 21A.In this stage, a channel etch type TFT comprising a channel formationregion 224, a source region 226 and a drain region 225 to be activelayers is completed.

Subsequently, a protective film 227 for preventing the channel formationregion 224 from being contaminated by impurity is formed (FIG. 20B). Forthe protective film 227, a material mainly containing silicon nitride orsilicon nitride oxide obtained with a sputtering method or a PCVD methodis used. In addition, the protective film 227 may be formed with the CVDdevice shown in FIG. 9 selectively. Here, an example of forming aprotective film is shown; however, it is not required to be to beprovided if it is particularly necessary.

Subsequently, an interlayer insulating film 228 is selectively formed bya droplet discharge method. A resin material such as an epoxy resin, anacrylic resin, a phenol resin, a novolac resin, a melamine resin, or aurethane resin is used as the interlayer insulating film 228. Inaddition, the interlayer insulating film 228 is formed by a dropletdischarge method by using an organic material such as benzocyclobutene,parylene, flare, or light-transmitting polyimide; a compound materialmade from polymerization such as siloxane-based polymer; a compositionmaterial containing water-soluble homopolymer and water-solublecopolymer; or the like.

Then, the protective film is etched by using the interlayer insulatingfilm 228 as a mask to form a projection (pillar) 229 comprising aconductor over a part of the source or drain wirings 222 and 223. Theprojection (pillar) 229 may be laminated by repeating discharging of acomposition containing a conductor (Ag (silver), Au (gold), Cu (copper),W (tungsten), or Al (aluminum) or the like) and baking.

Subsequently, a first electrode 230 in contact with the projection(pillar) 229 is formed over the interlayer insulating film 228 (FIG.21C). A terminal electrode 241 in contact with a wiring 240 is similarlyformed. An example in which a driving TFT is an n-channel type isdescribed here; therefore, the first electrode 230 preferably functionsas a cathode. In the case where a first electrode has light-transmittingproperties, a predetermined pattern formed of a composition mainlycontaining metal particles such as indium tin oxide (ITO), indium tinoxide containing silicon oxide (ITSO), zinc oxide (ZnO), tin oxide(SnO₂) is formed by a droplet discharge method or a printing method andbaked to form the first electrode 230 and a terminal electrode 241. Inthe case where first electrode is reflective, the first electrode 230and the terminal electrode 241 can be formed of a composition mainlycontaining particles of a metal such as Ag (silver), Au (gold), Cu(copper), W (tungsten), or Al (aluminum) by a droplet discharge method.As another method, a transparent conductive film or a light reflectiveconductive film is formed with a sputtering method, and a mask patternis formed by a droplet discharge method; thus, the first electrode 230may be formed by further etching.

FIG. 22 shows a top view of a pixel in a stage of FIG. 21C an example.In FIG. 22, a cross-section along with a chain line A-A′ correspondswith a cross-sectional view of the right side of a pixel portion in FIG.21C, and a chain line B-B′ corresponds with a cross-sectional view ofthe left side of the pixel portion in FIG. 21C. Note that in FIG. 22,the same reference numerals are used as the parts corresponding parts inFIGS. 20A to 20E and 21A to 22D. In FIG. 22, a part to be an edge of asidewall 234 which is formed later is shown with a dotted line.

In case of forming a pattern of relatively large area such as the firstelectrode 230 by a droplet discharge method, there is a risk that aprojection and a depression are caused. Accordingly, it is preferablethat a surface of the first electrode 230 is planarized by hot-presswith the pressing device shown in FIGS. 5A and 5B. Additionally, in caseof using a material such as indium tin oxide (ITO) which requires bakingfor crystallization as a material of the first electrode 230, pressingand baking can be carried out simultaneously.

An example in which the protective film 227 is provided is describedhere; therefore, the interlayer insulating film 228 and the projection(pillar) 229 are formed separately. However, in the case where theprotective film is not provided, the interlayer insulating film 228 andthe projection (pillar) 229 can formed by the same device (for example,the device shown in FIGS. 7 and 8A to 8C) by a droplet discharge method.

Then, a partition 234 covering a periphery of the first electrode 230 isformed. The partition (also referred to as a bank) 234 is formed byusing a material containing silicon, an organic material and aninorganic material. In addition, a porous film may be used. It ispreferable that a photosensitive or non-photosensitive material such asacryl, polyimide or the like is used since a radius of curvature of theside surface is serially varies without any break in a thin film in anupper layer.

According to the above-mentioned steps, a TFT substrate for a lightemitting display panel in which a bottom gate type TFT (also referred toas an inverted staggered type TFT) and first electrode are formed overthe substrate 210 is completed.

Subsequently, a layer functioning as an electroluminescent layer,namely, a layer 236 containing an organic compound is formed. The layer236 containing an organic compound has a laminated structure, and eachlayer is formed by using a vapor deposition method or a coating method,respectively. For example, it is sequentially laminated in order of anelectron transport layer, a light emitting layer, a hole transportlayer, a hole inject layer over a cathode. Note that plasma treatment inoxygen atmosphere or heating treatment in vacuum atmosphere ispreferably carried out before forming the layer 236 containing anorganic compound. In case of using a vapor deposition method, an organiccompound is vaporized beforehand by resistive heating, and it isscattered in a direction of the substrate by which a shutter is openedin vapor deposition. The vaporized organic compound is scattered aboveto be evaporated on the substrate through an opening provided in a metalmask. In addition, a mask may be aligned every luminous color (R, G andB) for full-colorization.

In addition, full color can be displayed by using a material exhibitingmonochrome emission as the layer 236 containing an organic compound, andcombining the layer 236 with a color filter or a color conversion layerwithout color-coating. For example, in case of forming anelectroluminescent layer exhibiting white or orange emission, full colorcan be displayed by separately providing a color filter or a fill colorfilter, a color conversion layer, the combination thereof. The colorfilter and the color conversion layer may be formed over a secondsubstrate (sealing substrate) to be pasted with the substrate. Asdescribed above, any of the material exhibiting monochrome emission, thecolor filter and the color conversion layer an be formed by a dropletdischarge method.

Of course, monochrome emission may be displayed. For example, a lightemitting display device of an area collar type may be formed by means ofmonochrome emission. A passive matrix display portion is suitable forthe light emitting display device of an area color type and can mainlydisplay characters and symbols.

Subsequently, the second electrode 237 is formed. The second electrode237 functioning as an anode of a light emitting element is formed byusing a transparent conductive film which transmits light. For example,besides ITO or ITSO, a transparent conductive film in which zinc oxide(ZnO) of 2% to 20% is mixed with indium oxide is used. A light emittingelement has a structure in which the layer 236 containing an organiccompound is interposed between the first electrode and the secondelectrode. In addition, the first and second electrodes are required toset the material thereof considering a work function. Both the first andsecond electrodes may be an anode or a cathode depending on a pixelstructure.

In order to decrease resistance of the second electrode 237, asupporting electrode may be provided over a second electrode of a regionwhich is not to be a light emitting region.

In addition, a protective layer protecting the second electrode 237 maybe formed. For example, a protective film comprising a silicon nitridefilm can be formed by using a disciform target containing silicon andmaking atmosphere of a film formation chamber nitrogen atmosphere oratmosphere containing nitrogen and argon. Additionally, a thin filmmainly containing carbon (DLC film, CN film or amorphous carbon film) isformed as a protective film, and a film formation chamber using a CVDmethod may be separately provided. A diamond like carbon film (alsoreferred to as a DLC film) can be formed with a plasma CVD method(typically, a RF plasma CVD method, a microwave CVD method, a electroncyclotron resonance (ECR) CVD method, a hot-filament CVD method or thelike), a combustion flame method, a sputtering method, an ion beamevaporation method, a laser beam evaporation method or the like. Ahydrogen gas and a hydrocarbon group gas (for example, CH₄, C₂H₂, C₆H₆or the like) are used as a reactive gas for film formation, which areionized by glow discharge, and resultant ions are accelerated andimpacted to the cathode which is negatively self-biased to form a film.A CN film may be formed by using a C₂H₄ gas and a N₂ gas as reactiongases. The DLC film and the CN film are insulating films, which aretransparent or translucent with respect to visible light. Thetransparency with respect to the visible light means that atransmittance of the visible light ranges from 80% to 100%, and thetranslucence means that a transmittance of the visible light ranges from50% to 80%. Note that the protective film is not particularly providedif it is not required.

Subsequently, the scaling substrate 235 is pasted with a sealant (notshown in the figure), to seal the light emitting element. A regionsurrounded with sealant is filled with a transparent filler 238. As thefiller 238, it is not particularly limited as long as it haslight-transmitting properties, and ultraviolet curing epoxy resin or aheat curing may be typically used. A highly heat resistant UV curingepoxy resin (product name 2500 Clear, manufactured by ElectroliteCooperation) having a refractive index of 1.50, a viscosity of 500 cps,a Shore D hardness of 90, a tensile strength of 3000 psi, a Tg point of150° C., a volume resistivity of 1×10¹⁵ Ω·cm, and a withstand voltage of450 V/mil is used here. By filling the filler 238 between a pair ofsubstrates, a total transmittance can be improved.

An FPC 246 is pasted to a terminal electrode 241 with an aerotropicconductive film 245 interposed therebetween by using a known method(FIG. 21D).

According to the above-mentioned steps, an active matrix light emittingdevice can be manufactured.

FIG. 24 is a top view showing an example of a structure of an EL displaypanel. FIG. 24 shows a structure of a light emitting display panel inwhich a signal to be imputed to a scan line and a signal line iscontrolled by an external driver circuit. Over a substrate 2700 with aninsulating surface, a pixel portion 2701 in which pixels 2702 arearranged in matrix, a scan line side input terminal 2703 and a signalline side input terminal 2704 are formed. The number of pixels may beprovided according to various standards. The number of pixels of XGA maybe 1024×768×3 (RGB), that of UXGA may be 1600×1200×3 (RGB), and that ofa full-speck high vision may be 1920×1080×3 (RGB).

The pixels 2702 are arranged in a matrix by intersecting scan linesextended from the scan line input terminal 2703 with a signal linesextended from the signal line input terminal 2704. Each pixel 2702 isprovided with a switching element and a pixel electrode connectedthereto. A typical example of the switching element is a TFT. A gateelectrode side of a TFT is connected to the scan line, and a source ordrain side thereof is connected to the signal line; therefore, eachpixel can be controlled independently by a signal inputted from outside.

When the first electrode is formed of a transparent material and thesecond electrode is formed of a metal material, a structure in whichlight is emitted through the substrate 210, namely, a bottom emissionstructure is obtained. Alternatively, when the first electrode is formedof a metal material and the second electrode is formed of a transparentmaterial, a structure in which light is emitted through the sealingsubstrate 235, namely, a top emission structure is obtained.Furthermore, when the first and second electrodes are formed of atransparent material, a structure in which light is emitted through boththe substrate 210 and scaling substrate 235 is obtained. The presentinvention may suitably adopt any one of the above-mentioned structures.

As mentioned above, in this embodiment mode, a shortened manufacturingtime and a simplified manufacturing step can be realized by omitting alight-exposure step using a photomask by a droplet discharge method. Inaddition, an EL display device can be easily manufactured by formingeach kind of patterns directly on a substrate by a droplet dischargemethod by even using a glass substrate after fifth generation, one sideof which exceeds 1000 mm is used. Further, a large-area panel can bemanufactured since an embedded wiring with low resistance can be formedby using a droplet discharge method.

In this embodiment mode, a step in which spin coat is not carried out,and a light-exposure step with a photomask is avoided as much aspossible. However, without limitation, a part of patterning may becarried out in the light-exposure step using a photomask.

This embodiment mode can be freely combined with Embodiment Mode 1.

The invention comprising the above-mentioned structures are described inmore detail with following embodiments.

Embodiment 1

The pixel structure shown in FIG. 3 is an example of forming a gatewiring and a gate electrode integrally. In this embodiment, the exampleof forming the gate wiring and the gate electrode separately is shown inFIGS. 10A and 10B.

FIG. 10A is an example of a top view of a pixel. In case of forming alarge-area panel, it is a bus line arranged vertically and horizontallythat needs a low resistance. Therefore, in this embodiment, a gateelectrode 415 a is an embedded wiring; and a gate wiring 415 b, a wiringhaving a mound-like cross-section.

First, similarly to Embodiment Mode 1, a base film 411 and an insulatinglayer 414 are formed over a substrate, and only gate electrode 415 ahaving a small wiring width is formed by a droplet discharge method.Then, after carrying out planarization by using a press treatment or aCMP processing, a gate wiring 415 b having a large wiring width isformed by a droplet discharge method so as to contact with the gateelectrode 415 a.

In case of forming a gate electrode having a small wiring width and agate wiring having a large wiring width by a droplet discharge method, aprocessing time for drawing the wide gate wiring gets longer when adischarge unit with a small nozzle diameter is used so as to form thegate electrode having a small wiring width.

In view of the above, in this embodiment, a discharge unit with a smallnozzle diameter is used for the gate electrode with a small wiringwidth, and a discharge unit having a large nozzle diameter is used forthe gate wiring with a large wiring width in order to improvethroughput. In the case where a little timing difference is causedbetween each formation of the gate electrode and the gate wiring,adhesiveness of the electrode or wiring formed first is relatively highbecause of an embedded wiring; however, there is a risk of decreasingadhesiveness therebetween. Accordingly, before forming the electrode orwiring to be formed later, a UV processing or a plasma treatment forimproving adhesiveness is preferably carried out.

Subsequent steps may be carried out according to Embodiment Mode 1 toform a gate insulating film 418, a semiconductor film 424, a drainelectrode 422, a source wiring 423, an interlayer insulating film 428, apillar 429, and a pixel electrode 430 sequentially. Since the gatewiring 415 b has a mound-like shape, deposition condition must be set sothat coverage defect is not generated in the gate insulating film 418and the interlayer insulating film 428

This embodiment mode can be freely combined with Embodiment Mode 1.

Embodiment 2

In this embodiment, an example of dropping a liquid crystal by a dropletdischarge method is shown. Additionally, in this embodiment, an exampleof obtaining four panels from a large-area substrate 100 is shown inFIGS. 11A to 11D.

FIG. 11A shows a cross-sectional view of a liquid crystal layer beingformed by ink-Jet printing. A liquid crystal material 114 is discharged,sprayed, or dropped from a nozzle 118 of a droplet discharge device 116so as to cover a pixel area 111 that is surrounded by a sealant 112. Thedroplet discharge device 116 is moved in the direction of the arrow inFIG. 11A. Here, an example of moving the nozzle 118; however, the liquidcrystal layer may be formed by moving the substrate while the nozzle isfixed.

FIG. 11B shows a perspective diagram. The liquid crystal material 114 isselectively discharged, sprayed, or dropped only in the area surroundedby the sealant 112, and an object surface 115 is moved correspondinglyto a nozzle scan direction 113.

FIGS. 11C and 11D show enlarged cross-sectional views of an areasurrounded by a dotted line in FIG. 11A. When the liquid crystalmaterial has high viscosity, it is discharged continuously and adheresin a manner where each droplet of the liquid crystal material is joinedto one another as shown in FIG. 11C. On the other hand, when the liquidcrystal material has low viscosity, it is discharged intermittently andthe droplets are dropped as shown in FIG. 11D.

In FIG. 11C, reference numerals 120 and 121 denote a reversed staggeredtype TFT and a pixel electrode, respectively. A pixel portion 111comprises pixel electrodes arranged in matrix; switching elementsconnected to the pixel electrode, which is a reversed staggered type TFThere; and a storage capacitor (not shown in the figure).

A workflow of manufacturing a panel is hereinafter described withreference to FIGS. 12A to 12D.

First, a first substrate 1035 in which a pixel portion 1034 is formedover its insulating surface is prepared. The first substrate 1035 ispretreated with the following steps: forming an orientation film,rubbing, forming spherical spacers, forming a column spacer, forming acolor filter or the like. Subsequently, a sealant 1032 is formed in apredetermined position (a pattern surrounding the pixel area 1034) witha dispenser or an inkjet device over the first substrate 1035 in aninert atmosphere or under reduced pressure, as shown in FIG. 12A. Amaterial containing a filler (diameters of 6 μm to 24 μm) which hasviscosities of 40 Pa·s to 400 Pa·s, is used as the sealant 1032 that istranslucent. It is preferable to select a sealant that is insoluble in aliquid crystal to be in contact therewith. A photo cured acrylic resinor a thermosetting acrylic resin may be used as the sealant. Further,the sealant 1032 can be formed also with a printing method since it hasa simple seal pattern.

Subsequently, a liquid crystal 1033 is dropped to an area surrounded bythe sealant 1032 by an ink jet method (FIG. 12B). A known liquid crystalmaterial with the viscosity that allows discharging with an ink jetmethod may be used as the liquid crystal 1033. Further, it is suitableto drop a liquid crystal by an ink-jet method since the viscosity of aliquid crystal material can be controlled by adjusting the temperature.The required amount of the liquid crystal 1033 can be stored in the areasurrounded by the sealant 1032 without a loss.

The first substrate 1035 provided with the pixel area 1034 and thesecond substrate 1031 provided with a counter electrode and anorientation film are pasted together under reduced pressure so as toprevent bubbles from being mixed in (FIG. 12C). The sealant 1032 iscured here by heat-treating or applying an ultra-violet ray. Note thatheat treatment may be carried out in addition to the ultra-violetirradiation.

FIGS. 13A and 13B show an example of a pasting device that is capable ofcarrying out ultra-violet irradiation or heat treatment while or aftersubstrates are pasted.

In FIGS. 13A and 13B, reference numeral 1041 denotes a first substratesupport; 1042, a second substrate support; 1044, a window; 1048, adownside measuring plate; and 1049, a light source. In FIGS. 13A and13B, the same reference numerals are used as the corresponding partswith FIGS. 12A to 12D.

The bottom downside measuring plate 1048 includes a heater, which curesa sealant. The second substrate support is provided with the window1044, so that ultra-violet light or the like from the light source 1049can transmit therethrough. Although it is not shown here, an alignmentof a position of the substrate is performed through the window 1044. Thesecond substrate 1031 serving as a counter substrate is cut into adesirable size in advance, and fixed to the second substrate support1042 with a vacuum chuck or the like. FIG. 13A shows a state beforepasting.

In pasting, after the first and second substrate supports are lowered,the first substrate 1035 and the second substrate 1031 are pastedtogether by pressurization, and ultra-violet light is applied to becured in that state. A state after pasting is shown in FIG. 13B.

Next, the first substrate 1035 is cut by using a cutting machine such asa scriber, a breaker, or a roll cutter (FIG. 12D). Thus, four panels canbe manufactured from one substrate. Further, an FPC is pasted by a knownmethod.

A glass substrate, a quartz substrate, or a plastic substrate can beused as the first substrate 1035 and the second substrate 1031.

FIG. 14A shows a top view of a liquid crystal module obtained throughthe above steps. FIG. 14B shows a top view of another liquid crystalmodule.

A TFT in which an active layer comprises an amorphous semiconductor filmhas low field-effect mobility of around 1 cm²/Vsec. Therefore, a drivercircuit for displaying an image is formed with an IC chip, and ismounted in a TAB (Tape Automated Bonding) method or a COG (Chip OnGlass) method.

In FIG. 14A, reference numeral 1101 denotes an active matrix substrate;1106, a counter substrate; 1104, a pixel area; 1107, a sealant; and1105, an FPC. Note that a liquid crystal is discharged with an ink jetmethod, and a pair of substrates 1101 and 1106 are pasted together withthe sealant 1107 under reduced pressure.

In case of using the TFT comprising an active layer formed of asemiamorphous silicon film, a part of a driver circuit can befabricated, thereby fabricating a liquid crystal module shown in FIG.11B. In case of forming a driver circuit, an additional process in whicha gate insulating film is selectively removed to form a contact hole isnecessary.

FIG. 15 shows a block diagram of a scan line side driver circuitconfigured by an n-channel type TFT using a semiamorphous silicon filmhaving the field effect mobility of 5 cm²/V·sec to 50 cm²/V·sec.

In FIG. 15, a block shown with numeral reference 500 corresponds to apulse output circuit outputting a sampling pulse for one stage, and ashift register is configured by n pieces of pulse output circuit.Reference numeral 501 denotes a buffer circuit, and a pixel 502 isconnected at the ends thereof.

FIG. 16 shows a specific structure of the pulse output circuit 500, andthe circuit is configured by n-channel type TFTs 601 to 612. At thistime, the size of the TFTs may be determined in consideration of anoperating characteristic of the n-channel type TFTs using asemiamorphous silicon film. For example, when the channel length is setto 8 μm, the channel width can be set in the range of from 10 μm to 80μm.

In addition, FIG. 17 shows a specific structure of a buffer circuit 501.The buffer circuit is configured by n-channel type TFTs 620 to 636 inthe same manner. At this time, the size of the TFTs may be determined inconsideration of an operating characteristic of the n-channel type TFTsusing a semiamorphous silicon film. For example, when the channel lengthis set to 10 μm, the channel width can be set ranging from 10 μm to 1800μm.

An IC chip (not shown in the figure) is mounted on a driver circuitwhich cannot be formed with the TFT having the active layer comprisingthe semiamorphous silicon film.

Additionally, the driver circuit may be formed with a TFT comprising apoly crystalline silicon film by selectively emitting laser light onlyonto a region in which the driver circuit is formed. Excimer laser lightwith a wavelength of 400 nm or less, and a second and third harmonicwaves of YAG laser are used as laser light. For example, pulsed laserlight with a repetition frequency of approximately from 10 Hz to 1000 Hzis used, the pulsed laser light is condensed to from 100 mJ/cm² to 500mJ/cm² by an optical system, and emitted with an overlap ratio of from90% to 95%, and thus, the silicon film surface may be scanned with it.When an amorphous semiconductor film is crystallized, the secondharmonic to the fourth harmonic of basic waves is preferably applied byusing a solid state laser which is capable of continuously oscillatingin order to obtain crystals with large grain size. Typically, the secondharmonic (a wavelength of 532 nm) or the third harmonic (a wavelength of355 nm) of an Nd:YVO₄ laser (a basic wave of 1064 nm) may be applied. Incase of using a continuous wave laser, laser light emitted from thecontinuous wave YVO₄ laser with 10 W output is converted into a harmonicwave by using a non-linear optical element. Also, a method of emitting aharmonic wave by applying YVO₄ crystals and the non-linear opticalelement into a resonator can be given. Then, preferably, the laser lightis shaped so as to have a rectangular shape or an elliptical shape by anoptical system on the surface, thereby irradiating the surface with thelaser light. At this time, the energy density of approximately from 0.01MW/cm² to 100 MW/cm² (preferably from 0.1 MW/cm² to 10 MW/cm²) isrequired. The semiconductor film is irradiated with the laser lightwhile moving the semiconductor film relatively to the laser light at arate approximately from 10 cm/s to 2000 cm/s.

In FIG. 14B, reference numeral 1111 denotes an active matrix substrate;1116, a counter substrate; 1112, a source signal line driver circuit;1113, a gate signal line driver circuit; 1114, a pixel portion; 1117, afirst sealant; and 1115, an FPC. Note that a liquid crystal isdischarged with a ink-jet method, and the pair of substrates 1111 and1116 are pasted together with the first sealant 1117 and a secondsealant. The liquid crystal is stored in the pixel portion 1114 sincethe liquid crystal is unnecessary for the source signal line drivercircuit 1112 and the gate signal line driver circuit 1113. The secondsealant 1118 is provided for reinforcement of an entire panel.

A back light 1604 and a light conducting plate 1605 are provided in theobtained liquid crystal module, and the liquid crystal module is coveredwith a cover 1606; thereby, an active matrix liquid crystal displaydevice (transmission type) is completed, a part of which across-sectional view is shown in FIG. 18. Note that the cover and themodule are fixed by using an adhesive or an organic resin. Since theactive matrix liquid crystal display device is a transmission type, apolarizing plate 1603 is pasted to both the active matrix substrate andthe counter substrate.

In FIG. 18, reference numeral 1600 denotes a substrate; 1601, a pixelelectrode; 1602, a column spacer; 1607, a sealant; 1620, a color filterin which a colored layer and a light-shielding film are disposed so asto corresponds to each pixel; 1621, a counter electrode; 1622 and 1623,orientation films; 1624, a liquid crystal layer; 1619, a protectivefilm. The column spacer 1602 may also be formed by a droplet dischargemethod.

This embodiment mode can be freely combined with Embodiment Mode 1 orEmbodiment 1.

Embodiment 3

This embodiment describes an example of manufacturing an active matrixliquid crystal display device which uses a channel stopper type TFT FIG.19 shows a cross-sectional view of a liquid crystal display device ofthis embodiment.

First, according to Embodiment Mode 1, a base film and an insulatingfilm are formed over an substrate, and a gate electrode 1901 is formedbetween patterned insulating films by a droplet discharge method.Subsequently, after planarization by pressing, a gate insulating film, asemiconductor film and a channel protective film are formed. As thechannel protective film, a material mainly containing silicon oxide,silicon nitride or silicon nitride oxide is formed by a PCVD method or asputtering method. Then, a channel protective film is selectively etchedto form a channel protective layer 1903. Alternatively, the channelprotective film may be formed by a droplet discharge method selectively.

Subsequently, the semiconductor film is patterned to form an island-likesemiconductor film 1902. An n-type semiconductor film is formed, andwirings 1905 and 1906 are formed by a droplet discharge method. Sourceor drain regions 1907 and 1904 comprising the n-type semiconductor filmare selectively etched using wirings 1905 and 1906 as masks. A pillar1929 and an interlayer insulating film 1928 are patterned with the samedevice by a droplet discharge method and baked. Here, the pillar 1929 isdischarged first, and the interlayer insulating film 1928 is dischargedlater; however, either of the above may be discharged first without aparticular limit on a step order. Additionally, after a temporary bakingor a final baking of either one of the pillar 1929 or the interlayerinsulating film 1928, the other may be discharged and baked with adifferent device.

Subsequent steps may be carried out similarly to Embodiment Mode 1. Thisembodiment is the same with Embodiment Mode 1 except its TFT structure.Therefore, in FIG. 19, the same reference numerals are used as identicalportions to HG 2D.

This embodiment mode can be freely combined with Embodiment Mode 1,Embodiments 1 or 2.

Embodiment 4

This embodiment describes an example in which a driver circuit fordriving is mounted on an EL display panel made by Embodiment Mode 2.

First, a display device adopting a COG method is described withreference to FIG. 25. Over a substrate 3700, a pixel portion 3701displaying information such as characters or an image, a driver circuit3702 on scan side are provided. The substrate provided with a pluralityof driver circuits is divided into a rectangular shape, and divideddriver circuits (herein after referred to as a driver IC) 3705 a and3705 b are mounted over the substrate 3700. FIG. 25 shows a mode inwhich the plurality of the driver ICs 3705 a and 3705 b are mounted, anda tape 3704 a and 3704 b are mounted over ends of the driver ICs 3705 aand 3705 b. By setting the width of the tape to have the same lengthwith that of the pixel portion on a side of signal line, a tape may bemounted over a single driver IC or an end of the driver IC.

In addition, a TAB method may be adopted. In that case, a plurality oftapes is attached, and a driver IC may be mounted on the tape. Similarlyto the case of COG method, a single driver IC may be mounted on a singletape. In view of its intensity, metal pieces or the like that fixes thedriver IC may be attached together in this case.

In view of improving productivity, a plurality of the driver ICs to bemounted on the EL display panel may be formed on a rectangular substratehaving one side of 300 mm to 1000 mm or more.

In other words, a plurality of circuit patterns each including a drivercircuit portion and input and output circuit terminals as a unit may beformed to be divided and taken out in the last. In consideration of alength of one side of the pixel portion and a pixel pitch, the driverICs may be formed into a rectangular shape of which long side length isfrom 15 mm to 80 mm and short side length is from 1 mm to 6 mm.Alternatively, it may be formed into a shape of which length is the sameas that of one side of the pixel region, or as the sum of the lengthsone side of the pixel portion and one side of each driver circuit.

The driver IC is more advantageous than an IC chip in the length of thelong side in the outside dimension. By using a driver IC having a longside length of 15 mm to 80 mm, the number of driver ICs to be mountedcorresponding to a pixel region can be reduced as compared with in caseof using the IC chip, thereby leading to improved productive yield.Furthermore, when the driver IC is formed on a glass substrate, the formof a substrate used as a mother body is not limited to the shape of thesubstrate; therefore, the productivity is not decreased. This provides agreat advantage as compared with the case where the IC chips are takenfrom a circular silicon wafer.

In FIG. 25, the driver ICs 3705 a and 3705 b in which driver circuitsare formed are mounted on an exterior region of the pixel portion 3701.Those driver ICs 3705 a and 3705 b are each driver circuit on the signalline. In order to form a pixel region for a RGB full color, 3072 signallines in XGA and 4800 signal lines in UXGA are necessary. The signallines of such a number forms a leading out line by dividing into severalblocks at an edge of the pixel region 2401 and are gathered inaccordance with a pitch of output terminals of the driver ICs 3705 a and3705 b.

The driver IC is preferably formed by using a crystalline semiconductorformed over a substrate. It is preferable that the crystallinesemiconductor is formed by being irradiated with a continuous-wavelaser. Therefore, a continuous-wave solid state laser or a gas laser isused as an oscillator with which the laser light is generated. Atransistor can be formed by using a polycrystalline semiconductor layerwith a large grain size having less crystal defects. In addition,high-speed driving is possible since the mobility or response speed isfavorable, and it is possible to further improve an operating frequencyof an element than that of a conventional element. Further, highreliability can be obtained since there are few variations inproperties. Note that a channel length direction of a transistor and ascan direction of laser light may be accorded with each other to furtherimprove an operating frequency. This is because the highest mobility canbe obtained when the channel length direction of a transistor and a scandirection of laser light with respect to a substrate are almost parallel(preferably, from −30° to 30°) in a step of laser crystallization by acontinuous-wave laser. The channel length direction coincides with adirection of current floating in a channel formation region, in otherwords, a direction in which an electric charge moves. The transistorthus manufactured has an active layer configured by a polycrystallinesemiconductor layer in which a crystal grain is extended in a channeldirection, and this means that a crystal grain boundary is formed almostalong the channel direction.

In carrying out laser crystallization, it is preferable to condense thelaser light considerably, and a beam spot thereof is preferably aboutfrom 1 mm to 3 mm as wide as a minor axis of the driver ICs. Inaddition, in order to ensure an enough and effective energy density toan object to be irradiated, region to be irradiated with laser light ofthe laser light is preferably a linear shape. However, a linear shapehere does not refer to a line in a proper sense, but includes arectangle or an oblong with a large aspect ratio. For example, thelinear shape refers to a rectangle or an oblong with an aspect ratio of2 or more preferably from 10 to 10000). Accordingly, productivity can beimproved by conforming a width of a beam spot of the laser light to thatof a short side length of the driver IC.

FIG. 25 shows a mode in which the scan line driver circuit is integrallyformed with the pixel portion and the driver IC is mounted as the signalline driver circuit. However, the invention is not limited to this mode,and the driver IC may be mounted as both a scan line driver circuit anda signal line driver circuit. In that case, it is preferable todifferentiate a specification of the driver ICs to be used on the scanline side and signal line side.

In the pixel region 3701, the signal line and the scan line areintersected to form a matrix and a transistor is disposed correspondingto each intersection. In this embodiment, a TFT having a structure inwhich a channel is formed with an amorphous semiconductor or asemiamorphous semiconductor can be used as the transistor arranged inthe pixel portion 3701. The amorphous semiconductor is formed by amethod such as a plasma CVD method or a sputtering method. Thesemiamorphous semiconductor is formed with a plasma CVD method, asputtering method or the like. It is possible to form the semiamorphoussemiconductor at a temperature of 300° C. or less with a plasma CVDmethod. A film thickness necessary to form a transistor is obtained in ashort time even in case of a non-alkaline glass substrate of an externalsize of, for example, 550 mm×650 mm. Such a manufacturing technique iseffective in manufacturing a liquid crystal display device of a largescreen. In addition, a semiamorphous TFT can obtain an electronfield-effect mobility of 2 cm²/V·sec to 10 cm²/V·sec by forming achannel formation region from a semiamorphous silicon film. Therefore,this TFT can be used as a switching element of pixels and as an elementwhich configures the scan line driver circuit. Therefore, an EL displaypanel realizing a system-on-panel can be manufactured.

In FIG. 25, it is premised on that a scan line side driver circuit isformed integrally on the substrate by using a TFT of which semiconductorlayer comprises a semiamorphous silicon film. In case of using the TFTof which semiconductor layer comprises a semiamorphous silicon film,both the scan line side driver circuit and signal line side drivercircuit may be mounted as driver ICs.

In that case it is preferred to differentiate a specification of thedriver ICs to be used on the scan line side and signal line side. Forexample, withstand voltage of around 30V is required for a transistorconfiguring a driver IC of the scan line side; however, drive frequencyis 100 kHz or less, and a high speed operation is not particularlyrequired. Therefore, it is preferable that a channel length (L) of atransistor configuring a driver on the scan side is set to besufficiently long. On the other hand, a withstand pressure of around 12V is enough for the transistor of the signal line driver ICs; however, adrive frequency is around 65 MHz at 3 V and a high speed operation isrequired. Therefore, it is preferable to set a channel length or thelike of the transistor configuring a driver with a micron rule.

A mounting method of driver IC is not particularly limited, and can usea known COG method, wire bonding method or TAB method.

By conforming the thickness of the driver IC to that of the countersubstrate, they can be much the same height, leading to reduction inthickness of a display device as a whole. Further, since each substrateis formed of the same material, thermal stress is not generated evenwhen the temperature in the liquid crystal display device is changed,and thus characteristics of the circuit made up of TFTs are not damaged.Moreover, as shown in this embodiment mode, by mounting a driver ICwhich is longer than an IC chip as a driver circuit, the number ofdriver ICs to be mounted in a pixel region can be reduced.

As described above, a driver circuit can be incorporated in an ELdisplay panel.

Embodiment 5

This embodiment shows an example of manufacturing an active matrix lightemitting display device using a channel stopper type TFT. Note that FIG.26 shows a cross-sectional view of a light emitting display device ofthis embodiment.

First, according to Embodiment Mode 2, a base layer and an insulatinglayer are formed over a substrate, and form a gate electrode 2901 isformed between patterned insulating layers by a droplet dischargemethod. Subsequently, after planarization by pressing, a gate insulatingfilm, a semiconductor film and a channel protective film are formed. Asa channel protective film, a material mainly containing silicon oxide,silicon nitride or silicon nitride oxide is formed by a PCVD method or asputtering method. Then, a channel protective film is selectively etchedto form a channel protective layer 2903. Alternatively, the channelprotective film may be formed by a droplet discharge method selectively.

Subsequently, the semiconductor film is patterned to form an island-likesemiconductor film 2902. An n-type semiconductor film is formed, andwirings 2905 and 2906 are formed by a droplet discharge method. Sourceand drain regions 2907 and 2904 comprising the n-type semiconductor filmare selectively etched using wirings 2905 and 2906 as masks. A pillar1929 and an interlayer insulating film 1928 are patterned with the samedevice by a droplet discharge method and baked. Here the pillar 2929 isdischarged first, and the interlayer insulating film 2928 is dischargedlater; however, either of the above may be discharged first without aparticular limit on a step order. Additionally, after a temporary bakingor a final baking of either one of the pillar 2929 or the interlayerinsulating film 2928, the other may be discharged and baked with adifferent device.

Subsequent steps may be carried out similarly to the preferredembodiment mode of the present invention. This embodiment is the same asthe preferred embodiment mode of the invention except its TFT structure.Therefore, in FIG. 26, the same reference numerals are used as identicalportions to FIG. 21D.

This embodiment can be freely combined with Embodiment Mode 2,Embodiments 4.

Embodiment 6

A scan line side driver circuit of can be formed over a substrate 3700as described with Embodiment 4 (FIG. 25) in an active matrix lightemitting device since a semiconductor layer of a TFT is formed of asemiamorphous silicon film.

The scan line side driver circuit may be realized by configuringcircuits of the block diagrams, which are shown in FIGS. 15, 16 and 17,by a TFT using a semiamorphous silicon film having a field effectmobility of 1 cm²V·sec to 15 cm²/V·sec. The detail of FIGS. 15, 16 and17 are described in Embodiment 2; therefore, they are not describedhere.

This embodiment can be freely combined with Embodiment Mode 2, orEmbodiments 4 or 5.

Embodiment 7

This embodiment describes a structure of a pixel of an EL panel withreference to an equivalent circuit diagram illustrated in FIGS. 27A to27F.

A pixel shown in FIG. 27A, a signal line 1410 and power supply lines1411 to 1413 are disposed in a column direction; and a scan line 1414, arow direction. Additionally, the pixel comprises a switching TFT 1401, adriving TFT 1403, a current control TFT 1404, a capacitor element 1402and a light emitting element 1405.

A pixel shown in FIG. 27C is the same as that shown in FIG. 27A exceptthat a gate electrode of the driving TFT 1403 is connected to a powersupply line 1415 disposed in a row direction. In other words, both thepixels shown in FIGS. 27A and 27C indicate the same equivalent circuitdiagram. However, in case of disposing a power supply line 1412 in a rowdirection (FIG. 27A) and the case of disposing a power supply line 1412in a column direction (FIG. 27C), each power supply line is formed of aconductive layer in different layers. Here, paying attention to a wiringto which the gate electrode of the driving TFT 1403 is connected, FIG.27A and FIG. 27C are separately described in order to show that thelayers in a layer in which the power supply lines are formed aredifferent.

As characteristics of the pixels shown in FIGS. 27A and 27C, the drivingTFT 1403 and the current control TFT 1404 is serially connected in thepixel, and a channel length L₃ and channel width W₃ of the driving TFT1403 and channel length L₄ and channel width W₄ of the current controlTFT 1404 are set so as to satisfy L₃/W₃:L₄/W₄=5 to 6000:1. As an exampleof the case satisfying 6000:1, a case can be given, in which L₃ is 500μm; W₃, 3 μm; L₄, 3 μm; and W₄, 100 μm.

In addition, the driving TFT 1403 operates in a saturation region andfunctions to control current value of the current flowing to the lightemitting element 1405. The current control TFT 11404 operates in alinear region and functions to control supply of the current to thelight emitting element 1405. It is preferable that both the TFTs havethe same conductive type in view of a manufacturing step. As the drivingTFT 1403, a TFT of a depletion type may be used as well as anenhancement type. Small variations in V_(GS) of the current control TFT1404 do not have an influence on a current value of the light emittingelement 1405 since the current control TFT 1404 operates in a linearregion according to the present invention having the above structure. Inother words, current value of light emitting element 1405 is determinedby the driving TFT 1403 operating in a saturation region. The inventionhaving the above-mentioned structures can provide a display device inwhich unevenness in luminance due to variations in characteristics of aTFT is improved to enhance an image quality.

In the pixels shown in FIGS. 27A to 27D, the TFT 1401 controls an inputof video signal to the pixel. When the TFT 1401 is turned on, and avideo signal is inputted to the pixel, the video signal is held in acapacitor element 1402. Although the pixels comprise each of thecapacitor element 1402 in FIGS. 27A and 27C, the invention is notlimited to this. When a gate capacitance and the like can replace thecapacitance for holding a video signal, the capacitor element 1402 isnot necessarily provided explicitly.

The light emitting element 1405 has a structure in which anelectroluminescent layer is sandwiched between a pair of electrodes. Apixel electrode and a counter electrode (anode and cathode) have apotential difference so that a forward bias voltage is applied to thelight emitting element 1405. The electroluminescent layer is formed of amaterial selected from various materials such as organic materials orinorganic materials. The luminescence in the electroluminescent layerincludes luminescence that is generated when an excited singlet statereturns to a ground state (fluorescence) and luminescence that isgenerated when an excited triplet state returns to a ground state(phosphorescence).

A pixel shown in FIG. 27B has the same structure as that shown in FIG.27A, except that a transistor 1406 and a scan line 1416 are added.Similarly, a pixel shown in FIG. 27D has the same structure as thatshown in FIG. 27C, except that the transistor 1406 and the scan line1416 are added.

The transistor 1406 is controlled to be on/off by the added scan line1416. When the transistor 1406 is turned on, charges held in thecapacitor element 1402 are discharged, thereby turning the transistor1406 off. In other words, supply of current to the light emittingelement 1405 can be forcibly stopped by disposing the transistor 1406.Accordingly, by adopting the structures shown in FIGS. 27B and 27D, alighting period can be started simultaneously with or shortly after awriting period before signals are written to all the pixels, therebyleading to the increased duty ratio.

In a pixel shown in FIG. 27E, a signal line 1450 is arranged in a columndirection and power supply lines 1451 and 1452 and a scan line 1453 arearranged in a row direction. The pixel further comprises a switching TFT1441, a driving TFT 1443, a capacitor element 1442, and a light emittingelement 1444. A pixel shown in FIG. 27F has the same structure as thatshown in FIG. 27E, except that a TFT 1445 and a scan line 1454 areadded. It is to be noted that the structure of FIG. 27F also allows theduty ratio to be increased due to the TFT 1445.

This embodiment can be freely combined with any one of Embodiment Mode2, and Embodiments 4 to 6.

Embodiment 8

As a semiconductor device and electronic device according to the presentinvention, a video camera, a digital camera, a goggle type display (headmount display), a navigation system, a sound reproduction device (caraudio, audio composition or the like), a laptop personal computer, agame machine, a personal digital assistant (mobile computer, a mobilephone, a portable game machine, an electronic dictionary or the like),an image reproduction device (specifically, a device playing a recordingmedium such as a Digital Versatile Disc (DVD), comprising a displaycapable of displaying an image) or the like can be given. In particular,it is preferable to use the invention for a large-sized television orthe like, having a large screen. An operative example of thoseelectronic devices is shown in FIGS. 28A to 28D.

FIG. 28A shows a large-sized display device comprising a large screen of22 inches to 50 inches, which includes a casing 2001, a support 2002, adisplay portion 2003, a video input terminal 2005 and the like. Adisplay device includes every display device for displaying informationfor a personal computer, a TV broadcast reception, an interactive TV andthe like. A large-sized display device which is relatively inexpensivecan be realized even when a large substrate after the fifth generation,which has a side exceeding 1000 mm is used.

FIG. 28B shows a laptop personal computer including a main body 2201, acasing 2202, a display portion 2203, a keyboard 2204, an externalconnection port 2205, a pointing mouse 2206 and the like. A laptoppersonal computer which is relatively inexpensive can be realizedaccording to the invention.

FIG. 28C shows a portable image reproduction device equipped with arecording medium (specifically, DVD player), which includes a main body2401, a casing 2402, a display portion A 2403, a display portion B 2404,a recording medium (DVD or the like) reading portion 2405, an operationkey 2406, a speaker unit 2407 and the like. The display portion A 2403mainly displays image information whereas the display portion B 2404mainly displays text information. The image reproduction device equippedwith a recording medium includes home video game machines and the like.An image reproduction device which is relatively inexpensive can berealized according to the invention.

FIG. 28D shows a wireless TV, and only the display thereof is portable.A battery and a signal receiver are incorporated in a casing 2602, and adisplay portion 2604 and a speaker unit 2607 are driven by the battery.The battery can be charged with a charger 2600 a number of times.Additionally, the charger 2600 can send and receive a video signal, andit can send the video signal to a signal receiver of the display. Thecasing 2602 is controlled by an operation key 2606. The device shown inFIG. 28D is also an interactive video/audio communication device sincethe device can send a signal from the casing to the charger 2600 byoperating the operation key 2606. Additionally, by operating theoperation key 2606, a signal can be sent from the casing to the charger2600. Further, by making another electronic device receive a signalsendable from the charger 2600, communication of another electronicdevice can be controlled. In that respect, it is also a general-purposeremote control device. According to the invention, a portable TV withrelatively large (from 22 inches to 50 inches) can be provided throughan inexpensive manufacturing process.

As described above, a display device obtained by the invention may beused as a display portion of every electronic device.

This embodiment mode can be freely combined with any one of EmbodimentMode 1 or 2, or Embodiment from 1 to 7.

INDUSTRIAL APPLICABILITY

According to the present invention, a liquid crystal display panel or alight emitting display panel can be manufactured at low cost by using aglass substrate after the fifth generation, of which one side exceeds1000 mm.

Additionally, according to the invention, productivity can be improved,and further, a process without carrying out spin coat can be realized.Accordingly, loss of material solution and an amount of waste solutioncan be reduced.

EXPLANATION OF REFERENCE

10 substrate; 11 base layer; 12 depression; 13 mask; 14 Insulatinglayer; 15 Metal wiring; 16 Extra droplet; 18 Gate insulating film; 19Semiconductor film; 20 N-type semiconductor film; 21 Mask; 22 Sourcewiring or a drain wiring; 23 Source wiring or a drain wiring; 24 Channelformation region; 25 Drain region; 26 Source region; 27 Protective film;28 Interlayer insulating film; 29 Pillar; 30 Pixel electrode; 34 aOrientation film; 34 b Orientation film; 35 Counter substrate; 36 aColored layer; 36 b Light-shielding layer; 37 Over coat layer; 38Counter electrode; 39 Liquid crystal; 40 Wiring; 41 Terminal electrode;45 Anisotropic conductive layer; 46 FPC; 51 Substrate; 52 Hot plate; 53Hot plate; 54 Top plate; 55 a Support; 55 b Support; 56 Teflon coatfilm; 57 Layer to be processed; 55 a Heater; 55 b Heater; 61 Substrate;62 Roller; 63 Feed roller; 64 Roller conveyer; 66 Teflon coat film; 67Layer to be processed; 73 Mask; 74 Insulating layer; 75 Wiring; 76 Extradroplet; 77 Water soluble resin; 110 Large-area substrate; 111 Pixelportion; 112 Sealing portion; 113 Nozzle scan direction; 114 Materialsolution; 115 Object surface; 116 Droplet discharge device; 118 Nozzle;119 Portion surrounded with a dotted line; 120 Inverted staggered typeTFT; 121 Pixel electrode; 210 Substrate; 211 Base layer; 212 Depression;213 Mask; 214 Insulating layer; 215 a Metal wiring; 215 b Metal wiring;216 Droplet; 217 Lead-out electrode; 218 Gate insulating film; 219Semiconductor film; 220 N-type semiconductor film; 221 Mask; 222 Sourcewiring or a drain wiring; 223 Source wiring or a drain wiring; 224Channel formation region; 225 Drain region; 226 Source region; 227Protective film; 228 Interlayer insulating film; 229 Pillar; 230 Firstelectrode; 234 Partition; 235 Sealing substrate; 236 Layer containing anorganic compound; 237 Second electrode; 238 Filler; 240 Wiring; 241Terminal electrode; 245 Anisotropic conductive film; 246 FPC; 273 Mask;274 Insulating layer; 275 a Wiring; 275 b Wiring; 276 Extra droplet; 277Water soluble resin; 300 Large-area substrate; 302 Pixel portion; 303Resist film; 380 Resist separation solution nozzle; 381 Resistseparation solution nozzles; 382 Deionized water nozzles; 383 Blownozzles; 384 a Substrate support; 411 Base layer; 414 Insulating layer;415 a Gate electrode; 415 b Gate wiring; 418 Gate insulating film; 422Drain electrode; 423 Source electrode; 424 Semiconductor film; 428Interlayer insulating film; 429 Pillar; 430 Pixel electrode; 500 Pulseoutput circuit; 501 Buffer circuit; 502 a pixel; 601 N-channel type TFT;620 to 635 N-channel type TFT; 800 Nozzle unit; 801 Substrate; 802 Firstmaterial layer; 803 Second material layer; 900 Substrate; 901 CVDdevice; 902 CVD device; 903 CVD device; 904 substrate transportationpath; 1031 Second substrate; 1032 Sealant; 1033 Liquid crystal; 1034Pixel portion; 1035 First substrate; 1041 First substrate support; 1042Second substrate support; 1044 Window; 1048 Bottom downside base plate;1049 Light source; 1101 Substrate; 1104 Pixel portion; 1105 FPC; 1106Counter substrate; 1107 Sealant; 1111 Substrate; 1112 Source signal linedriver circuit; 1113 Gate signal line driver circuit; 1114 Pixelportion; 1115 FPC; 1116 Counter substrate; 1117 First sealant; 1118Second sealant; 1401 Switching TFT; 1402 Capacitor element; 1403 DrivingTFT; 1404 Current control TFT; 1405 Light emitting element; 1406 TFT;1410 Signal line; 1411 Power source line; 1412 Power source line; 1413Power source line; 1414 Scan line; 1415 Power source line; 1416 Scanline; 1441 Switching TFT; 1442 Capacitor element; 1443 Driving TFT; 1444Light emitting element; 1445 TFT; 1450 Signal line; 1451 Power sourceline; 1452 Power source line; 1453 Scan line; 1454 Scan line; 1500Large-sized substrate; 1503 Region where one panel is formed; 1504Imaging unit; 1505 a Head; 1505 b Head; 1505 c Head; 1507 Stage; 1511Marker; 1600 Substrate; 1601 Pixel electrode; 1602 Spacer; 1603Orientation film; 1604 Back light; 1605 Light conducting plate; 1606Cover; 1607 Sealant; 1620 Colored layer; 1621 Counter electrode; 1622Orientation film; 1623 Orientation film; 1624 Liquid crystal layer; 1901Gate electrode; 1902 Semiconductor film; 1903 Channel protective layer;1904 Source region or a drain region; 1905 Wiring; 1906 Wiring; 1907Source region or a drain region; 1928 Interlayer insulating film; 1929Pillar; 2001 Casing; 2002 Support; 2003 Display portion; 2005 Videoinput terminal; 2201 Main body; 2202 Casing; 2203 Display portion; 2204Keyboard; 2205 External connection port; 2206 Pointing mouse; 2401 Mainbody; 2402 Casing; 2403 Display portion A; 2404 Display portion B; 2405Recording medium reading part; 2406 Operation key; 2407 Speaker unit;2600 Charger; 2602 Casing; 2603 Display portion; 2604 Display portion;2606 Operation key; 2407 Speaker unit; 2700 Substrate; 2701 Pixelportion; 2702 Pixel; 2703 Scan line side input terminal; 2704 Signalline side input terminal; 2901 Gate electrode; 2902 Semiconductor film;2903 Channel protective layer; 2904 Source region or a drain region;2905 Wiring; 2906 Wiring; 2907 Source region or a drain region; 2928Interlayer insulating film; 2929 Pillar; 3700 Substrate; 3701 Pixelportion; 3702 Driver circuit; 3704 a Tape; 3704 b Tape; 3705 a DriverIC; 3705 b Driver IC

1. A semiconductor device comprising a base layer formed over a substrate having an insulating surface; an insulating layer and at least one of a gate wiring and a gate electrode formed over the base layer; a gate insulating film formed over one of the gate wiring and the gate electrode; and an active layer of a thin film transistor including at least a channel formation region over the gate insulating film; a source wiring and an electrode formed over the active layer; and a pixel electrode formed over the electrode, wherein one of the gate wiring and the gate electrode contains a resin and has the same film thickness as that of the insulating layer.
 2. A semiconductor device according to claim 1, wherein the base layer comprises a material selected from the group consisting of a transition metal, an oxide of said transition metal, a nitride of said transition metal, and an oxynitride of said transition metal.
 3. A semiconductor device according to claim 2, wherein the transition metal comprises a material selected from the group consisting of Sc, Ti, Cr, Ni, V, Mn, Fe, Co, Cu, Zn.
 4. A semiconductor device according to claim 1, wherein the active layer of the thin film transistor is a non-single crystalline semiconductor film or a polycrystalline semiconductor film added with hydrogen or halogen hydrogen.
 5. A semiconductor device according to claim 1, the width of the gate electrode of the thin film transistor is from 5 μm to 100 μm.
 6. A semiconductor device according to claim 1, wherein the length of the gate electrode width of the thin film transistor is shorter than that of the thickness of the gate electrode of the thin film transistor.
 7. A semiconductor device according to claim 1, wherein a surface including an upper surface of the gate wiring or the gate electrode and a surface including an upper surface of the insulating layer are in the same plane.
 8. A semiconductor device according to claim 1, wherein a PV value of a projection and a depression on an upper surface of the insulating layer is less than 20 nm.
 9. A semiconductor device according to claim 1, wherein P-V value of a projection and a depression on the upper surface of the gate wiring or gate electrode is lower than 20 nm.
 10. A semiconductor device according to claim 1, further comprising: a liquid crystal display device including a second substrate opposing to the substrate, and a liquid crystal interposed between a pair of substrates composed of the substrate and the second substrate.
 11. A semiconductor device according to claim 1, further comprising a plurality of light emitting elements including a cathode, a layer containing an organic compound and a anode.
 12. A semiconductor device according to claim 1, wherein the semiconductor device is an interactive video/audio communication device or a general-purpose remote control device.
 13. A semiconductor device comprising: an insulating layer and at least one of a gate wiring and a gate electrode formed over a substrate having an insulating surface; a gate insulating film formed over one of the gate wiring and the gate electrode; and an active layer of a thin film transistor including at least a channel formation region over the gate insulating film; a source wiring and an electrode formed over the active layer; and a pixel electrode formed over the electrode, wherein one of the gate wiring and the gate electrode contains a resin and has the same film thickness as that of the insulating layer.
 14. A semiconductor device according to claim 13, wherein the length of the gate electrode width of the thin film transistor is shorter than that of the thickness of the gate electrode of the thin film transistor.
 15. A semiconductor device according to claim 13, wherein a surface including an upper surface of the gate wiring or the gate electrode and a surface including an upper surface of the insulating layer are in the same plane.
 16. A semiconductor device according to claim 13, further comprising: a liquid crystal display device including a second substrate opposing to the substrate, and a liquid crystal interposed between a pair of substrates composed of the substrate and the second substrate.
 17. A semiconductor device according to claim 13, further comprising a plurality of light emitting elements including a cathode, a layer containing an organic compound and a anode.
 18. A semiconductor device according to claim 13, wherein the semiconductor device is an interactive video/audio communication device or a general-purpose remote control device. 